HY27UU08AG5A

Effective Inventory5,113

  • Manufacturer Part # : HY27UU08AG5A

  • Package/Case: TSOP

  • Brand: HYNIX

  • Product Categories : Flash Memories

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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WireTransfer

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MoneyGram

Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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Example

Tape and Reel

Tape and Reel

Cut Tape

Cut Tape

Tube or Tray

Tube or Tray

HY27UU08AG5A DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Quick Inquiry

Please submit RFQ for HY27UU08AG5A or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The HYNIX HY27(U/S)A(08/16)1G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.FEATURES SUMMARYHIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applicationsNAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densitiesSUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UAXX1G1M - 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M 1.8V Operation Product : TBDMemory Cell Array - 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks PAGE SIZE - x8 device: (512 + 16 spare) Bytes : HY27(U/S)A081G1M - x16 device: (256 + 8 spare) Words : HY27(U/S)A161G1MBLOCK SIZE- x8 device: (16K + 512 spare) Bytes : HY27(U/S)A081G1M- x16 device: (8K + 256 spare) Words : HY27(U/S)A161G1MPAGE READ / PROGRAM - Random access: 12us (max) - Sequential access: 50ns (min) - Page program time: 200us (typ)COPY BACK PROGRAM MODE - Fast page copy without external bufferingFAST BLOCK ERASE - Block erase time: 2ms (Typ)STATUS REGISTERELECTRONIC SIGNATURESequential Row Read OptionAUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory DownloadSERIAL NUMBER OPTIONHARDWARE DATA PROTECTION - Program/Erase locked during Power transitionsDATA INTEGRITY - 100,000 Program/Erase cycles - 10 years Data RetentionPACKAGE - HY27(U/S)A(08/16)1G1M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27(U/S)A(08/16)1G1M-T (Lead) - HY27(U/S)A(08/16)1G1M-TP (Lead Free) - HY27(U/S)A08121A-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm) - HY27(U/S)A081G1M-V (Lead) - HY27(U/S)A081G1M-VP (Lead Free) - HY27(U/S)A(08/16)121M-F(P) : 63-Ball FBGA (8.5 x 15 x 1.2 mm) - HY27(U/S)A(08/16)1G1M-F (Lead) - HY27(U/S)A(08/16)1G1M-FP (Lead Free)

Key Features

  • HIGH DENSITY NAND FLASH MEMORIES
  • - Cost effective solutions for mass storage applications
  • NAND INTERFACE
  • - x8 or x16 bus width.
  • - Multiplexed Address/ Data
  • - Pinout compatibility for all densities
  • SUPPLY VOLTAGE
  • - 3.3V device: VCC = 2.7 to 3.6V : HY27UAXX1G1M
  • - 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M 1.8V Operation Product : TBD
  • Memory Cell Array
  • - 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks
  • PAGE SIZE
  • - x8 device: (512 + 16 spare) Bytes : HY27(U/S)A081G1M
  • - x16 device: (256 + 8 spare) Words : HY27(U/S)A161G1M
  • BLOCK SIZE
  • - x8 device: (16K + 512 spare) Bytes : HY27(U/S)A081G1M
  • - x16 device: (8K + 256 spare) Words : HY27(U/S)A161G1M
  • PAGE READ / PROGRAM
  • - Random access: 12us (max)
  • - Sequential access: 50ns (min)
  • - Page program time: 200us (typ)
  • COPY BACK PROGRAM MODE
  • - Fast page copy without external buffering
  • FAST BLOCK ERASE
  • - Block erase time: 2ms (Typ)
  • STATUS REGISTER
  • ELECTRONIC SIGNATURE
  • Sequential Row Read Option
  • AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
  • - Boot from NAND support
  • - Automatic Memory Download
  • SERIAL NUMBER OPTION
  • HARDWARE DATA PROTECTION
  • - Program/Erase locked during Power transitions
  • DATA INTEGRITY
  • - 100,000 Program/Erase cycles
  • - 10 years Data Retention
  • PACKAGE
  • - HY27(U/S)A(08/16)1G1M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
  • - HY27(U/S)A(08/16)1G1M-T (Lead)
  • - HY27(U/S)A(08/16)1G1M-TP (Lead Free)
  • - HY27(U/S)A08121A-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm)
  • - HY27(U/S)A081G1M-V (Lead)
  • - HY27(U/S)A081G1M-VP (Lead Free)
  • - HY27(U/S)A(08/16)121M-F(P) : 63-Ball FBGA (8.5 x 15 x 1.2 mm)
  • - HY27(U/S)A(08/16)1G1M-F (Lead)
  • - HY27(U/S)A(08/16)1G1M-FP (Lead Free)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

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