HY57V28820HCT-H
HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 MbHY57V28820HCT-H
HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 Mb
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HY57V28820HCT-H DataSheet

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Interested Parts
HY57V28820HCT-H Description
The HY57V28820HCT-H is a high-performance Synchronous DRAM from SK Hynix Inc, designed for reliable data transfer in various applications. This device features 512Mb of memory, a 3.3V power supply, and supports high-speed data transfer with low power consumption.
Features
- 512Mb SDRAM: Offers high memory capacity for demanding applications.
- 3.3V power supply: Provides a reliable and efficient power source.
- High speed data transfer: Supports fast data rates for improved system performance.
- Low power consumption: Optimized for low power usage, ideal for battery-powered devices or energy-efficient systems.
- Double data rate architecture: Enables high-speed data transfer while minimizing power consumption.
- Programmable CAS latency: 2,3: Allows for flexible configuration to suit specific application requirements.
- Auto refresh and self refresh mode: Ensures reliable memory operation with minimal power consumption.
- 64ms, 4K refresh rate: Supports fast refresh rates for improved system performance.
Applications
The HY57V28820HCT-H is commonly used in various applications that require high-performance memory and low power consumption, including computer motherboards, graphics cards, networking equipment, telecommunications devices, industrial control systems, embedded systems, automotive electronics, medical devices, consumer electronics, and military and aerospace applications.
Where to Use:
- Computer motherboards
- Graphics cards
- Networking equipment
- Telecommunications devices
- Industrial control systems
- Embedded systems
- Automotive electronics
- Medical devices
- Consumer electronics
- Military and aerospace applications
Manufacturer
The HY57V28820HCT-H is manufactured by SK Hynix Inc, a leading provider of memory solutions. This product was developed to meet the growing demand for high-performance memory with low power consumption in various industries.
Packages
The HY57V28820HCT-H comes in a TSOP-II package, designed for surface-mount technology and offering a compact and efficient solution for integrating the Synchronous DRAM into electronic circuits.
FAQ
Q: What is the memory capacity of the HY57V28820HCT-H?
A: It features 512Mb of Synchronous DRAM.
Q: How does the HY57V28820HCT-H handle power consumption?
A: It is designed with low power consumption in mind, making it suitable for battery-powered devices or energy-efficient systems.
Q: Can the HY57V28820HCT-H be used in automotive applications?
A: Yes, it can be used in various automotive applications that require high-performance memory and low power consumption.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Part Package Code | TSOP2 | Pin Count ! | 54 |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.02 |
Access Mode ! | FOUR BANK PAGE BURST | Access Time-Max | 5.4 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 133 MHz |
I/O Type | COMMON | Interleaved Burst Length | 1,2,4,8 |
JESD-30 Code | R-PDSO-G54 | Length | 22.238 mm |
Memory Density | 134217728 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 8 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 54 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 70 °C |
Organization | 16MX8 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies ! | 3.3 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 4096 | Seated Height-Max | 1.194 mm |
Self Refresh | YES | Sequential Burst Length | 1,2,4,8,FP |
Standby Current-Max | 0.002 A | Supply Current-Max | 0.22 mA |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.8 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is HY57V28820HCT-H?
The HY57V28820HCT-H is a high-speed CMOS synchronous DRAM (SDRAM) designed by Hynix Semiconductor. It is ideal for applications requiring fast and efficient memory access, such as networking equipment, telecommunications systems, and graphics processing units.
How Does HY57V28820HCT-H Work?
The HY57V28820HCT-H operates as a synchronous dynamic random-access memory, providing high-speed data storage and retrieval. It utilizes a synchronous interface for precise data communication with the system. The SDRAM features burst mode access and on-chip refresh, optimizing memory access performance.
How Many Pins does HY57V28820HCT-H have and What are the Functions of the Pinout Configuration?
The HY57V28820HCT-H is housed in a 54-pin TSOP-II (Thin Small Outline Package) package. The pinout configuration includes:
- VDD, VDDQ: Power supply pins for core and I/O interface.
- VSS, VSSQ: Ground connections for core and I/O interface.
- DQ0-DQ17: Data input/output pins.
- CLK: Clock input pin for synchronous operation.
- WE, CAS, RAS: Control pins for write enable, column address strobe, and row address strobe.
- CS: Chip select pin for device activation.
- DM: Data mask for write data.
What are the Pros and Cons of HY57V28820HCT-H?
Pros:
- High Speed: Offers fast access times for rapid data processing.
- Synchronous Operation: Synchronizes with the system clock for precise data transfer.
- Burst Mode Access: Supports burst read and write operations for efficient data retrieval.
- On-Chip Refresh: Includes auto-refresh capabilities, reducing the need for external refresh circuitry.
- Wide Operating Voltage Range: Works with a broad supply voltage range for compatibility in various systems.
Cons:
- Complex Timing: Requires careful timing considerations for proper operation.
- Power Consumption: High-speed operation may lead to increased power consumption.
- Interface Complexity: Synchronous interface may require additional control signals for efficient data transfer.
Are There Any Equivalents/Alternatives to HY57V28820HCT-H for Recommendation?
- The MT48LC16M16A2 from Micron Technology is a similar high-speed SDRAM option.
- Alternatives to the HY57V28820HCT-H include the IS42S16100E from Integrated Silicon Solution Inc. (ISSI) and the CY7C1041DV33 from Cypress Semiconductor.
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