HY57V28820HCT-H
HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 MbHY57V28820HCT-H
HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 Mb
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HY57V28820HCT-H DataSheet
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HY57V28820HCT-H Details
HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 Mb. It is organized in 4 banks of 8M x 8 bits and operates at a maximum clock frequency of 133MHz. It features Fast Page Mode, Single Page Mode, and Burst Read operations. This chip is commonly used in high-performance computing and networking applications.
Key Features
- 512Mb SDRAM
- 3.3V power supply
- High speed data transfer
- Low power consumption
- Double data rate architecture
- Programmable CAS latency: 2,3
- Auto refresh and self refresh mode
- 64ms, 4K refresh rate
- Available in TSOP-II package
Application
- Computer motherboards
- Graphics cards
- Networking equipment
- Telecommunications devices
- Industrial control systems
- Embedded systems
- Automotive electronics
- Medical devices
- Consumer electronics
- Military and aerospace applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Part Package Code | TSOP2 | Pin Count ! | 54 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code ! | 8542.32.00.02 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 5.4 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 133 MHz | I/O Type | COMMON |
Interleaved Burst Length | 1,2,4,8 | JESD-30 Code | R-PDSO-G54 |
Length | 22.238 mm | Memory Density | 134217728 bit |
Memory IC Type | SYNCHRONOUS DRAM | Memory Width | 8 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 54 | Number of Words | 16777216 words |
Number of Words Code | 16000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 16MX8 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies ! | 3.3 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 4096 | Seated Height-Max | 1.194 mm |
Self Refresh | YES | Sequential Burst Length | 1,2,4,8,FP |
Standby Current-Max | 0.002 A | Supply Current-Max | 0.22 mA |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.8 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is HY57V28820HCT-H?
The HY57V28820HCT-H is a high-speed CMOS synchronous DRAM (SDRAM) designed by Hynix Semiconductor. It is ideal for applications requiring fast and efficient memory access, such as networking equipment, telecommunications systems, and graphics processing units.
How Does HY57V28820HCT-H Work?
The HY57V28820HCT-H operates as a synchronous dynamic random-access memory, providing high-speed data storage and retrieval. It utilizes a synchronous interface for precise data communication with the system. The SDRAM features burst mode access and on-chip refresh, optimizing memory access performance.
How Many Pins does HY57V28820HCT-H have and What are the Functions of the Pinout Configuration?
The HY57V28820HCT-H is housed in a 54-pin TSOP-II (Thin Small Outline Package) package. The pinout configuration includes:
- VDD, VDDQ: Power supply pins for core and I/O interface.
- VSS, VSSQ: Ground connections for core and I/O interface.
- DQ0-DQ17: Data input/output pins.
- CLK: Clock input pin for synchronous operation.
- WE, CAS, RAS: Control pins for write enable, column address strobe, and row address strobe.
- CS: Chip select pin for device activation.
- DM: Data mask for write data.
What are the Pros and Cons of HY57V28820HCT-H?
Pros:
- High Speed: Offers fast access times for rapid data processing.
- Synchronous Operation: Synchronizes with the system clock for precise data transfer.
- Burst Mode Access: Supports burst read and write operations for efficient data retrieval.
- On-Chip Refresh: Includes auto-refresh capabilities, reducing the need for external refresh circuitry.
- Wide Operating Voltage Range: Works with a broad supply voltage range for compatibility in various systems.
Cons:
- Complex Timing: Requires careful timing considerations for proper operation.
- Power Consumption: High-speed operation may lead to increased power consumption.
- Interface Complexity: Synchronous interface may require additional control signals for efficient data transfer.
Are There Any Equivalents/Alternatives to HY57V28820HCT-H for Recommendation?
- The MT48LC16M16A2 from Micron Technology is a similar high-speed SDRAM option.
- Alternatives to the HY57V28820HCT-H include the IS42S16100E from Integrated Silicon Solution Inc. (ISSI) and the CY7C1041DV33 from Cypress Semiconductor.
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