IXKN75N60C

Name: IXKN75N60C
Rating: 4.5 (10 reviews)

High-power N-channel MOSFET transistor in a 4-pin SOT-227B package

7,209 Effective Inventory

IXKN75N60C

Effective Inventory7,209

High-power N-channel MOSFET transistor in a 4-pin SOT-227B package

Manufacturer Part # : IXKN75N60C
Package/Case: SOT227-4
Part Status : Active
Brand: Ixys Integrated Circuits Division
Product Categories : FETs, MOSFETs

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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IXKN75N60C DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Details

IXKN75N60C is an N-channel enhancement-mode power MOSFET designed for high voltage applications. It has a drain-source voltage rating of 600V and a continuous drain current rating of 75A. The device features a low on-resistance of 0.045 ohms, making it suitable for high power applications where efficiency and thermal performance are important.This MOSFET is housed in a TO-247 package, which provides good thermal performance and reliability. The package is designed for easy mounting and heat sinking, allowing for efficient heat dissipation during operation.IXKN75N60C also features a gate charge of 76nC and a low gate threshold voltage of 3V. This makes it easy to drive the MOSFET with standard gate drive circuits, ensuring fast switching speeds and minimal power losses.

Key Features

IXKN75N60C is an IGBT transistor with a high voltage rating of 600V and a current rating of 75A

It is designed for high power switching applications, offering low conduction and switching losses

The device also features low Vcesat and fast switching speeds, making it ideal for use in motor control, power supplies, and renewable energy systems

Application

The IXKN75N60C is a high voltage IGBT (insulated-gate bipolar transistor) designed for use in applications such as induction heating systems, solar inverters, and motor control

Its high voltage and current capabilities make it suitable for power electronics applications where high efficiency and switching speeds are required

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V)	600	Maximum On-Resistance @ 25 ℃ (Ohm)	0.036
Continuous Drain Current @ 25 ℃ (A)	75	Gate Charge (nC)	500
Input Capacitance, CISS (pF)	13600	Thermal resistance [junction-case] (K/W)	0.22
Configuration	Single	Package Type	SOT-227B (minibloc)
Typical Reverse Recovery Time (ns)	580	Power Dissipation (W)	560
Isolated Tab RMS Voltage (V)	2500	Sample Request	No
Check Stock	Yes

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IXKN75N60C PDF Download