IXFN210N20P

Name: IXFN210N20P
Rating: 4.5 (10 reviews)

Product IXFN210N20P is a Power Field-Effect Transistor with a current rating of 188A, a voltage capability of 200V, and a low on-resistance of 0

3,509 Effective Inventory

IXFN210N20P

Effective Inventory3,509

Product IXFN210N20P is a Power Field-Effect Transistor with a current rating of 188A, a voltage capability of 200V, and a low on-resistance of 0

Manufacturer Part # : IXFN210N20P
Package/Case: SOT-227-4
Part Status : Active
Brand: Littelfuse
Product Categories : FETs, MOSFETs

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IXFN210N20P DataSheet

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Details

The IXFN210N20P is a high power MOSFET transistor designed for use in applications requiring high efficiency and reliability. It is a N-channel enhancement mode power MOSFET with a maximum drain-source voltage rating of 200V and a continuous drain current rating of 80A. This MOSFET features a low on-resistance of 0.03 ohms, which allows for efficient power dissipation and reduces power losses in high power applications. It also has a high gate threshold voltage of 4V, ensuring reliable operation in high voltage circuits.The IXFN210N20P is housed in a TO-247 package, which provides good thermal performance and high power dissipation capability. This package also allows for easy mounting on heat sinks for improved thermal management.With a fast switching speed and low gate charge, the IXFN210N20P is suitable for use in applications such as power supplies, motor control, and high power amplifiers. This MOSFET is designed to provide low conduction losses and high efficiency, making it ideal for high power, high voltage applications where reliability and performance are paramount

Key Features

IXFN210N20P is a 200V power MOSFET with a current rating of 210A

It has a low on-state resistance, high DC current gain, and a low gate charge

This device is suitable for high-power applications such as power supplies, motor drives, and inverters

It also features a small form factor, ensuring easy integration into various electronic designs

Application

The IXFN210N20P is a power MOSFET that can be used in various applications such as motor control, power supplies, and inverters

It is ideal for use in high voltage and high frequency switching applications due to its low on-state resistance and fast switching speed

Its compact size makes it suitable for use in space-constrained environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V)	200	Maximum On-Resistance @ 25 ℃ (Ohm)	0.0105
Continuous Drain Current @ 25 ℃ (A)	188	Gate Charge (nC)	255
Input Capacitance, CISS (pF)	18600	Thermal resistance [junction-case] (K/W)	0.14
Configuration	Single	Package Type	SOT-227
Power Dissipation (W)	1070	Maximum Reverse Recovery (ns)	200
Sample Request	Yes

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IXFN210N20P PDF Download