IXFN180N20

The IXFN180N20 is a high-power N-channel MOSFET designed for applications up to 200 volts and 180 amps, enclosed in a 4-pin SOT-227B package
5,693 Effective Inventory

IXFN180N20

Effective Inventory5,693

The IXFN180N20 is a high-power N-channel MOSFET designed for applications up to 200 volts and 180 amps, enclosed in a 4-pin SOT-227B package

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IXFN180N20 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $127.568 $127.57
200 $50.901 $10,180.20
500 $49.200 $24,600.00
1000 $48.359 $48,359.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for IXFN180N20 or email to us: Email: [email protected], we will contact you in 12 hours.

IXFN180N20 Details

The IXFN180N20 is a power MOSFET transistor designed for high-efficiency power switching applications. This N-channel MOSFET offers a low on-state resistance and high current capability, making it suitable for power supplies, motor control, and other high-power electronics. It is housed in a TO-247 package, providing robust thermal performance and reliability.

Pinout

  • 1 (Gate): Gate Terminal
  • 2 (Drain): Drain Terminal
  • 3 (Source): Source Terminal

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-State Resistance: Provides efficient power switching with minimal conduction losses.
  • High Current Capability: Capable of handling high currents for power applications.
  • TO-247 Package: Features a TO-247 package for excellent thermal performance and reliability.
  • Fast Switching Speed: Allows for rapid switching transitions in high-frequency applications.
  • Robust Construction: Built to withstand high power and temperature conditions.

Application

  • Power Supplies: Ideal for high-efficiency power supply designs.
  • Motor Control: Suitable for motor drive and control applications.
  • Inverters: Used in inverter circuits for converting DC to AC power.

Where to Use

The IXFN180N20 is recommended for applications that require efficient power switching and high current handling capabilities. It is commonly used in power supplies, motor controllers, and inverter systems for reliable and efficient operation.

How to Use

Connect the Gate, Drain, and Source terminals of the IXFN180N20 according to the circuit requirements. Ensure proper heat sinking for the TO-247 package to maintain optimal thermal performance. Take into account gate drive voltage and current requirements for efficient switching. Refer to the datasheet for detailed usage guidelines.

Application Circuit

The application circuit diagram for the IXFN180N20 demonstrates the proper connection of the MOSFET in power switching applications. It includes the gate drive circuit, load connections, and thermal management considerations for reliable operation.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IRF3205: A comparable power MOSFET with similar electrical characteristics.
  • FDP8878: An alternative MOSFET option for power switching applications.

Complementary

The IXFN180N20 can be effectively complemented by the IXFN230N20, offering higher current capabilities for demanding power applications. Ensure compatibility and ratings alignment when selecting complementary power MOSFETs.

Frequently Asked Questions

Q: What is the maximum current rating of the IXFN180N20?

A: The IXFN180N20 can handle currents up to its specified rating. Consult the datasheet for detailed current ratings and operational limits.

Q: Is the IXFN180N20 suitable for high-frequency switching applications?

A: Yes, the IXFN180N20 is designed for fast switching speeds, making it suitable for high-frequency applications. However, consider the thermal implications and drive requirements for optimal performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0125
Continuous Drain Current @ 25 ℃ (A) 180 Gate Charge (nC) 660
Input Capacitance, CISS (pF) 22000 Thermal resistance [junction-case] (K/W) 0.18
Configuration Single Package Type SOT-227
Power Dissipation (W) 700 Maximum Reverse Recovery (ns) 250
Sample Request No

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IXFN180N20 PDF Download

FAQs

What is IXFN180N20?

The IXFN180N20 is a high power MOSFET transistor designed by IXYS Corporation. It is ideal for applications requiring high current and voltage handling capabilities, such as power supplies, motor control, and industrial switches.

How Does IXFN180N20 Work?

The IXFN180N20 works by controlling the flow of current through a semiconductor channel when a voltage is applied to the gate terminal. It is designed to handle high power levels with minimal conduction and switching losses, making it suitable for high-efficiency power management applications.

How Many Pins does IXFN180N20 have and What are the Functions of the Pinout Configuration?

The IXFN180N20 is housed in a TO-264 package. The pinout configuration includes:

  • GATE: Gate control terminal.
  • DRAIN: Power output terminal.
  • SOURCE: Grounding terminal.

What are the Pros and Cons of IXFN180N20?

Pros:

  • High power handling capability: Suitable for high power applications.
  • Low conduction and switching losses: Offers high efficiency in power management.

Cons:

  • High voltage requirements: May not be suitable for low voltage applications.
  • Heat dissipation: High power handling may require efficient heat dissipation mechanisms.

Are There Any Equivalents/Alternatives to IXFN180N20 for Recommendation?

Similar power MOSFET alternatives to the IXFN180N20 include the IRF1405 from Infineon Technologies and the FDPF33N25T from Fairchild Semiconductor.

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