IXFR90N30

N-Channel Silicon Metal-oxide Semiconductor FET with 0.033ohm
16 Effective Inventory

IXFR90N30

Effective Inventory16

N-Channel Silicon Metal-oxide Semiconductor FET with 0.033ohm

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Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

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IXFR90N30 DataSheet
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IXFR90N30 Description

The IXFR90N30 is a Power Field-Effect Transistor from IXYS, designed for high-performance applications that require low RDS(on) and high current handling capability. This device is ideal for industrial power management systems, featuring ISOPLUS247 technology and a TO-247-3 package.

Pin Details

The IXFR90N30 is a single FET with 3 pins for half-duplex communication. It includes pins for driving and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1: N-Channel MOSFET Drain
  • Pin 2: Source
  • Pin 3: Gate

Features

  • International Standard Packages: Offers a compact and reliable package solution.
  • High Current Handling Capability: Handles up to 75A of current, making it suitable for demanding applications.
  • Low RDS(on): Provides low on-resistance for efficient power management.
  • HDMOS process: Utilizes a high-density MOSFET process for improved performance and reliability.
  • Avalanche Rated: Ensures reliable operation in harsh environments with high voltage and current stress.
  • Low Package Inductance: Minimizes electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • Fast intrinsic diode: Provides a fast switching time for efficient power management.

Applications

The IXFR90N30 is commonly used in systems that require high current handling capability, low RDS(on), and reliable operation. It is well-suited for applications such as DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC Motor Drives, and Temperature and Lighting Controls.

Where to Use:

  • Industrial power management systems
  • Battery-powered devices
  • Automotive applications
  • Aerospace and defense systems

Manufacturer

The IXFR90N30 was developed by IXYS, a leading manufacturer of power semiconductors. This product was designed to meet the growing demand for high-performance power management solutions in industrial, automotive, and aerospace applications.

Packages

The IXFR90N30 comes in a TO-247-3 package, which is designed for surface-mount technology and offers a compact and efficient solution for integrating the transistor into electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Pin Count ! 3
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature ! AVALANCHE RATED Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V Drain Current-Max (Abs) (ID) 75 A
Drain Current-Max (ID) 75 A Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSIP-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style IN-LINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 400 W
Pulsed Drain Current-Max (IDM) 360 A Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer IXYS Product Category ! MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 300 V Id - Continuous Drain Current 75 A
Rds On - Drain-Source Resistance 36 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4.5 V Qg - Gate Charge 360 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Pd - Power Dissipation 417 W Channel Mode Enhancement
Tradename HyperFET Series IXFR90N30
Brand IXYS Fall Time 40 ns
Forward Transconductance - Min 40 S Height 21.34 mm
Length 16.13 mm Product Type ! MOSFET
Rise Time ! 55 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Type HiPerFET Power MOSFET Typical Turn-Off Delay Time 100 ns
Typical Turn-On Delay Time 42 ns Width 5.21 mm
Unit Weight 0.211644 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IXFR90N30 PDF Download

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