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IXFN36N100
High-Power Field-Effect Transistor IXFN36N100 - Unleashing efficient power control in demanding environmentsIXFN36N100
High-Power Field-Effect Transistor IXFN36N100 - Unleashing efficient power control in demanding environments
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Manufacturer Part # : IXFN36N100
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Package/Case: SOT227-4
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Part Status : Active
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Brand: IXYS Corporation
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Product Categories : Single FETs, MOSFETs
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Series : IXFN36
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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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IXFN36N100 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $70.102 | $70.10 |
| 200 | $27.129 | $5,425.80 |
| 500 | $26.175 | $13,087.50 |
| 1000 | $25.705 | $25,705.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
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IXFN36N100 Details
The IXFN36N100 is a power MOSFET from IXYS, designed for high-power switching applications. This MOSFET features a maximum drain-source voltage of 100V, making it suitable for various power control and conversion circuits. With low on-state resistance and high current handling capabilities, the IXFN36N100 offers efficient power management in demanding electronic systems.
Pinout
- 1 (Gate): Gate Terminal
- 2 (Source): Source Terminal
- 3 (Drain): Drain Terminal
- 4 (NC): No Connection
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Voltage Rating: Maximum drain-source voltage of 100V for power applications.
- Low On-State Resistance: Efficient power management with low conduction losses.
- High Current Handling: Capable of handling high currents for robust performance.
- Fast Switching Speed: Enables rapid switching in power control circuits.
- Enhanced Power Efficiency: Improves overall system efficiency and thermal performance.
Application
- Power Supplies: Used in power supply units for efficient power regulation.
- Motor Drives: Applied in motor control systems for precise speed and torque control.
- Inverters: Employed in inverter circuits for converting DC power to AC power.
Where to Use
The IXFN36N100 is ideal for applications requiring high-power switching and efficient power management. It is commonly used in power supplies, motor drives, and inverter circuits to ensure reliable performance and energy efficiency.
How to Use
Connect the IXFN36N100 to your circuit by wiring the gate, source, and drain terminals as per the application requirements. Ensure proper gate control signals for switching operations. Consider thermal management and drive circuitry for optimal performance. For detailed usage instructions, refer to the datasheet.
Application Circuit
The application circuit diagram for the IXFN36N100 demonstrates how to integrate the power MOSFET into your power control system. It includes connections for gate control, power input, and output, optimizing power flow and efficiency.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- IXFN38N100: A comparable power MOSFET offering similar performance characteristics.
- IRF640: An alternative power MOSFET with equivalent voltage and current ratings.
Complementary
The IXFN36N100 can be complemented by the IXDN609PI, a high-speed gate driver, for enhanced switching performance and protection features in power control applications.
When selecting complementary components, ensure compatibility and optimization for the desired power system requirements.
Frequently Asked Questions
Q: What is the maximum voltage rating of the IXFN36N100?
A: The IXFN36N100 has a maximum drain-source voltage of 100V, suitable for various power applications. Refer to the datasheet for detailed voltage specifications.
Q: Can the IXFN36N100 be used in high-frequency switching circuits?
A: Yes, the IXFN36N100 is designed for fast switching operations, making it suitable for high-frequency applications. Ensure proper drive circuit design for optimal performance.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Drain-Source Voltage (V) | 1000 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.24 |
| Continuous Drain Current @ 25 ℃ (A) | 36 | Gate Charge (nC) | 380 |
| Input Capacitance, CISS (pF) | 9200 | Thermal resistance [junction-case] (K/W) | 0.18 |
| Configuration | Single | Package Type | SOT-227 |
| Power Dissipation (W) | 694 | Maximum Reverse Recovery (ns) | 180 |
| Sample Request | No | Check Stock | Yes |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IXFN36N100?
The IXFN36N100 is a high-power, high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by IXYS Corporation. It is ideal for use in high-power applications such as motor drives, power supplies, and renewable energy systems.
How Does IXFN36N100 Work?
The IXFN36N100 works by controlling the flow of current between the drain and source terminals using an electric field. It can switch high currents and high voltages with low ON-resistance, making it suitable for power conversion and control applications.
How Many Pins does IXFN36N100 have and What are the Functions of the Pinout Configuration?
The IXFN36N100 is housed in a TO-268 package. The pinout configuration includes:
- GATE: Controls the switching of the MOSFET.
- DRAIN: Connects to the high-voltage load or power supply.
- SOURCE: Connects to the low-voltage ground or return path.
What are the Pros and Cons of IXFN36N100?
Pros:
- High Power Handling: Capable of handling high currents and voltages.
- Low ON-Resistance: Efficient power conversion with minimal conduction losses.
- Robustness: Designed to withstand high power and voltage levels.
- Reliability: Suitable for rugged and demanding industrial applications.
Cons:
- Drive Circuit Complexity: May require a drive circuit for proper gate control.
- Heat Dissipation: High-power devices like the IXFN36N100 may require thermal management to dissipate heat effectively.
- Size: Larger package size compared to lower-power MOSFETs.
Are There Any Equivalents/Alternatives to IXFN36N100 for Recommendation?
Similar high-power MOSFETs include the IRFP4668 from Infineon Technologies and the FDP8878 from Fairchild Semiconductor.
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Price details
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