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STB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel designSTB100N10F7
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design
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Manufacturer Part # : STB100N10F7
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Package/Case: D2PAK
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Brand: STMicroelectronics
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Product Categories : FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
Example
Tape and Reel
Cut Tape
Tube or Tray
STB100N10F7 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- N-channel power MOSFET
- 100V drain-source voltage
- 10A continuous drain current
- 7mΩ on-resistance
- Low gate charge
- Fast switching speed
- Enhanced body diode
Application
- Power supplies
- Motor control
- Lighting applications
- DC-DC converters
- Solar inverters
- Uninterruptible power supplies (UPS)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
| Avalanche Energy Rating (Eas) | 400 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 80 A | Drain-source On Resistance-Max | 0.008 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 320 A |
| Surface Mount | NO | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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