STP6NK90Z
N-channel 900 V, 1.56 Ohm typical, 5.8 A SuperMESH Power MOSFET in a TO-220 packageSTP6NK90Z
N-channel 900 V, 1.56 Ohm typical, 5.8 A SuperMESH Power MOSFET in a TO-220 package
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Manufacturer Part # : STP6NK90Z
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Package/Case: TO-220
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Brand: STMicroelectronics NV
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Product Categories : Single FETs, MOSFETs
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Series : STP6NK90
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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STP6NK90Z DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
STP6NK90Z Description
The STP6NK90Z is a high-performance N-channel power MOSFET from STMicroelectronics, designed for reliable switching applications in various industries. This device features extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and Zener-protected, making it suitable for demanding environments.
Pin Details
The STP6NK90Z is a single FET with 3 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (Drain): Drain Pin
- Pin 2 (Gate): Gate Pin
- Pin 3 (Source) Tab: Source Pin and Tab
Features
- Extremely High dv/dt Capability: Offers high-speed switching performance.
- 100% Avalanche Tested: Ensures reliable operation in harsh conditions.
- Gate Charge Minimized: Reduces power consumption and improves overall system efficiency.
- Zener-Protected: Provides added protection against voltage surges and spikes.
Applications
The STP6NK90Z is commonly used in various applications that require high-performance switching, including automotive electronics, solar power inverters, LED lighting fixtures, data center cooling systems, telecom transmission equipment, power backup solutions, audio equipment output stages, and more.
Where to Use:
- Automotive electronics
- Solar power inverters
- LED lighting fixtures
- Data center cooling systems
- Telecom transmission equipment
- Power backup solutions
- Audio equipment output stages
- Solar panel systems
- Industrial automation systems
Manufacturer
The STP6NK90Z is manufactured by STMicroelectronics, a global leader in semiconductor technology. It falls under the category of power MOSFETs, which are designed to facilitate reliable and efficient switching applications in various industries.
This product was developed to meet the growing demand for high-performance switching solutions in automotive, industrial, and consumer electronics markets, where features like extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and Zener-protected are essential.
Packages
The STP6NK90Z comes in a TO-220 package. This package is designed for through-hole mounting, offering a reliable and efficient solution for integrating the power MOSFET into electronic circuits.
Equivalent Parts of STP6NK90Z
- FQP50N60C: A comparable N-channel power MOSFET from Fairchild Semiconductor with similar features and performance.
- IRF540N: An alternative N-channel power MOSFET from International Rectifier that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Active | Part Package Code | TO-220AB |
Pin Count ! | 3 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 50 Weeks |
Additional Feature ! | AVALANCHE RATED, HIGH VOLTAGE | Avalanche Energy Rating (Eas) | 300 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 900 V |
Drain Current-Max (Abs) (ID) | 5.8 A | Drain Current-Max (ID) | 5.8 A |
Drain-source On Resistance-Max | 2 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 140 W |
Pulsed Drain Current-Max (IDM) | 23.2 A | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Finish | MATTE TIN |
Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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