BUP307

Name: BUP307
Rating: 4.5 (10 reviews)

TO-218 Insulated Gate Bipolar Transistor with 35A I(C) and 1200V V(BR)CES

6,266 Effective Inventory

BUP307

Effective Inventory6,266

TO-218 Insulated Gate Bipolar Transistor with 35A I(C) and 1200V V(BR)CES

Manufacturer Part # : BUP307
Package/Case: TO-218
Brand: Infineon Technologies Ag
Product Categories : IGBTs

Quality Assurance

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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BUP307 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for BUP307 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

BUP307 is a silicon NPN power transistor that is commonly used in power amplifier applications. It has a maximum collector current of 8A and a maximum collector-emitter voltage of 400V, making it suitable for medium power applications. The transistor has a low saturation voltage and high current gain, resulting in efficient power amplification. BUP307 is designed for use in switching circuits, motor control systems, and other applications where high power handling capabilities are required. It is commonly used in industrial and automotive applications due to its robust design and high reliability. The transistor is housed in a TO-220 package, which allows for easy mounting on heat sinks to dissipate heat generated during operation. This ensures that the transistor operates within its specified temperature range, increasing its longevity and performance.

Key Features

BUP307 is a Silicon NPN Triple Diffused Planar Power Transistor.
It is designed for high voltage power switching applications.
It has a maximum collector-base voltage of 1500V and a continuous collector current of 5A.
This transistor is suitable for use in various electronic circuits requiring high voltage power amplification.

Application

Switching power supplies
Motor control applications
DC-DC converters
LED lighting
Industrial automation
Audio amplifiers
Battery management systems
Automotive electronics
Solar inverters

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8541.29.00.95	Collector Current-Max (IC)	35 A
Collector-Emitter Voltage-Max	1200 V	Configuration	SINGLE
Fall Time-Max (tf)	300 ns	Gate-Emitter Thr Voltage-Max	6.5 V
Gate-Emitter Voltage-Max	20 V	JEDEC-95 Code	TO-218
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	310 W
Power Dissipation-Max (Abs)	310 W	Qualification Status	Not Qualified
Rise Time-Max (tr)	200 ns	Surface Mount	NO
Terminal Finish	Tin/Lead (Sn/Pb)	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	MOTOR CONTROL
Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BUP307 PDF Download