BUZ357
Channel Silicon Metal-oxide Semiconductor FETBUZ357
Channel Silicon Metal-oxide Semiconductor FET
-
Manufacturer Part # : BUZ357
-
Package/Case: TO218
-
Brand: Infineon Technologies
-
Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
WireTransfer
Paypal
CreditCard
WesternUnion
MoneyGram
Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
Example
Tape and Reel
Cut Tape
Tube or Tray
BUZ357 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
BUZ357 Details
The BUZ357 is a power MOSFET transistor specifically designed for use in high current, high voltage applications. It has a voltage rating of 800 volts and a current rating of 14 amps, making it suitable for a wide range of power electronics applications. The transistor is housed in a TO-220 package, which allows for easy mounting on a heatsink to dissipate heat efficiently.The BUZ357 features a low on-state resistance, typically around 0.25 ohms, which helps to minimize power losses and improve efficiency in high current applications. The transistor also has a fast switching speed, allowing for rapid turn-on and turn-off times, which is important for applications where precise control is required.In addition, the BUZ357 has high input impedance, which means it requires only a small amount of drive current to operate effectively. This makes it compatible with a wide range of control circuits and allows for easy integration into existing designs.
Key Features
- 500V N-Channel Power MOSFET
- Fast switching speed
- Low on-resistance
- High power capability
- High current handling capacity
- Low gate charge
- Designed for high energy efficiency applications
- Suitable for DC-DC converters, power supplies, and motor control
Application
- Switch mode power supplies
- Solar inverters
- Motor control applications
- High frequency applications
- Audio amplifiers
- Lighting control applications
- Radio frequency (RF) amplifier applications
- Power management applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Transferred |
Part Package Code | TO-218 | Pin Count ! | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code ! | 8541.29.00.95 | Avalanche Energy Rating (Eas) | 850 mJ |
Configuration | SINGLE | DS Breakdown Voltage-Min | 1000 V |
Drain Current-Max (Abs) (ID) | 5 A | Drain Current-Max (ID) | 5 A |
Drain-source On Resistance-Max | 2 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 40 pF | JEDEC-95 Code | TO-218 |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 125 W | Power Dissipation-Max (Abs) | 125 W |
Pulsed Drain Current-Max (IDM) | 20 A | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 690 ns | Turn-on Time-Max (ton) | 205 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
Recommend Parts
-
TO-218 Insulated Gate Bipolar Transistor with 35A I(C) and 1200V V(BR)CES
Brand: Infineon Technologies Package/Case: TO-218
6,266 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
7,959 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
5,401 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
5,812 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
N-Channel Power MOSFET with 75A and 40V ratings
Brand: NXP Semiconductors Package/Case: TO263
7,054 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
1A BUK455-60A 60V N-CHANNEL POWER MOSFET with 0.038 ohm Si
Brand: Philips Package/Case: TO-220
7,318 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
4,927 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
5,726 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
4,599 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
BUL310FP
$0.167 BUL310FP: TO-220F Package Bipolar Transistors - BJT ROHS Approved
Brand: STMicroelectronics NV Package/Case: TO-220-3 FP
3,970 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
With its impressive current gain and voltage rating, BUTAF is ideal for driving loudspeakers and other devices in a wide range of application
Brand: NXP Semiconductors Package/Case: TO-220F
5,719 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
4,713 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
Fast-switching NPN bipolar transistors suitable for high-voltage applications
Brand: STMicroelectronics NV Package/Case: TO-247
3,764 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
Price details
Prices listed do not include VAT.
Quantity | Unit Price |
---|