IRF7822
8-Pin SOIC N-Type N-Channel MOSFET 30V 18AIRF7822
8-Pin SOIC N-Type N-Channel MOSFET 30V 18A
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Manufacturer Part # : IRF7822
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Package/Case: SOIC-8
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Brand: Infineon
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRF7822 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRF7822 is a power MOSFET transistor designed for general-purpose switching applications. It is a P-channel enhancement-mode transistor with a high drain-source voltage of 100V and a continuous drain current of 3.5A. This transistor has a low on-resistance of 0.27 ohms, which allows for efficient power dissipation in high-current applications. It is housed in a TO-220 package, which provides good thermal conductivity and makes it easy to mount on a heatsink for better thermal management.The IRF7822 has a gate-source threshold voltage of -2.0V to -4.0V, making it suitable for logic level drive applications. It also has a fast switching speed and low input capacitance, making it ideal for use in high-frequency switching circuits.
Key Features
- Fast switching speeds
- Low gate charge
- Low On-Resistance
- Logic-Level Gate Drive
- P-Channel MOSFET
- High Efficiency
- Compliant with RoHS requirements
- High Power Handling Capability
- Small package size for space-saving designs
- Thermal protection for reliable operation
Application
- Power management in portable electronics
- Battery charging circuits
- DC-DC converters
- Power supplies
- Motor control applications
- LED lighting
- Consumer electronics
- Industrial automation
- High-performance computing
- Telecommunications equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 18 A |
Rds On - Drain-Source Resistance | 6.5 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 3.1 W | Channel Mode | Enhancement |
Brand | Infineon / IR | Configuration | Single |
Fall Time | 12 ns | Height | 1.75 mm |
Length | 4.9 mm | Product Type ! | MOSFET |
Rise Time ! | 5.5 ns | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 15 ns | Width | 3.9 mm |
Unit Weight | 0.019048 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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