FQPF6N80C

Effective Inventory7,490

Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F, 1000-TUBE

  • Manufacturer Part # : FQPF6N80C

  • Package/Case: TO-220FP

  • Brand: Onsemi

  • Product Categories : Single FETs, MOSFETs

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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FQPF6N80C DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Quick Inquiry

Please submit RFQ for FQPF6N80C or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The FQPF6N80C is a top-of-the-line N-Channel power MOSFET that boasts ON Semiconductor's cutting-edge planar stripe and DMOS technology. This innovative design not only decreases on-state resistance but also delivers exceptional switching capabilities and remarkable avalanche energy strength. With these features, the FQPF6N80C is ideal for a wide range of applications such as switched mode power supplies, active power factor correction, and electronic lamp ballasts

Key Features

  • 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V
  • Low gate charge ( typical 21 nC)
  • Low Crss ( typical 8 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Lifetime Buy
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 15 Weeks Avalanche Energy Rating (Eas) 680 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V Drain Current-Max (Abs) (ID) 5.5 A
Drain Current-Max (ID) 5.5 A Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 51 W
Pulsed Drain Current-Max (IDM) 22 A Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Finish Matte Tin (Sn) - annealed
Terminal Form ! THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification FQPF6N80C PDF Download

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