2N7002E-7-F

Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002E-7-F
4,910 Effective Inventory

2N7002E-7-F

Effective Inventory4,910

Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002E-7-F

  • Manufacturer Part # : 2N7002E-7-F

  • Package/Case: SOT-23-3

  • Part Status : Active

  • Brand: DIODES

  • Product Categories : FETs, MOSFETs

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Service & Packaging

Service & Packaging

About After Sales Service

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Initiate the application within 90 days from the shipment date.

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2N7002E-7-F DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
10 $0.045 $0.45
100 $0.037 $3.70
300 $0.033 $9.90
3000 $0.030 $90.00
6000 $0.028 $168.00
9000 $0.027 $243.00

These prices are subiect to market fluctuations and quote submission is required.

Quick Inquiry

Please submit RFQ for 2N7002E-7-F or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The 2N7002E-7-F is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for low-power switching applications.

Key Features

  • N-Channel Enhancement Mode: Operates in the enhancement mode, meaning it enhances the conductivity of the channel when a voltage is applied to the gate.
  • Low On-Resistance: The MOSFET has low on-resistance, which minimizes power losses and improves overall efficiency in electronic circuits.
  • Low Threshold Voltage: Features a low threshold voltage, making it suitable for low-power switching applications.
  • Compact Package: Comes in a compact surface-mount package, allowing for space-efficient design in electronic circuits.

Application

  • Low-Power Switching: Designed for low-power switching applications where efficient and reliable switching is required.
  • Signal Switching: Used in electronic circuits for signal switching applications.
  • Voltage Level Shifting: Suitable for voltage level shifting applications in various electronic devices.
  • Load Switching: Applied in load switching applications for devices with low power requirements.

Equivalent Parts

Replaceable Parts

  • 2N7002DW-7-F
  • 2N7002DW
  • 2N7002WT1G
DIODES Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Name 2N7002E-7-F Product Type N-Channel MOSFET
Manufacturer ON Semiconductor Package Type SOT-23
Drain-Source Voltage (Vds) 60V Continuous Drain Current (Id) 0.3A
On-State Resistance (Rds(on)) 5 Ohms Gate Threshold Voltage (Vgs(th)) 1.0V - 2.5V
Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 300 mA Rds On - Drain-Source Resistance 3 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 223 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 540 mW
Channel Mode Enhancement Series 2N7002E
Brand Diodes Incorporated Configuration Single
Forward Transconductance - Min 80 mS Height 1 mm
Length 2.9 mm Product MOSFET Small Signals
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 7 ns Width 1.3 mm
Unit Weight 0.000282 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N7002E-7-F PDF Download

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