Recommend Parts

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    IRCZ44: A robust N-channel MOSFET engineered for 50A current loads and 60V voltage requirements

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    IXFN36N100 $25.705

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  • CSD19532KTT

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    CSD19538Q2T

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  • BUZ357

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    Channel Silicon Metal-oxide Semiconductor FET

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    BLW60C

    Compact design enables efficient integration into RF systems

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    N-Channel 60A Power MOSFET 30V 0.009 Ohm

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  • 2SK2414

    2SK2414

    Small Signal Field-Effect Transistor, 10A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3, 3 PIN

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    24 ohm Si power MOSFET 15A 250V

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  • MG75Q2YS50

    MG75Q2YS50

    TRANSISTOR MG75Q2YS50, N-CHANNEL IGBT, Insulated Gate BIP Transistor, 100A, 1200V

    Brand: Toshiba Package/Case: IGBT

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  • MG75Q2YS40

    MG75Q2YS40

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    Brand: Toshiba Package/Case: Module

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  • MG75N2YS40

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    Transistor 75A, 1000V, N-channel IGBT

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  • MG50Q2YS40

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    TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT

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  • MG200Q2YS40

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    200A, 1200V Transistor

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    00A, 1200V, N-CHANNEL IGBT, 7 PIN

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  • MFE201

    MFE201

    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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  • 2SK902

    2SK902

    Power Field-Effect Transistor, 30A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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  • 2SK1217

    2SK1217

    Power Field-Effect Transistor

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  • 2SJ626

    2SJ626

    1500mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN

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