Specification Comparison: K4S641632K-UC75 vs K4S641632H-TC60 vs K4S641632K-UC60

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Manufacturer Samsung Electro-Mechanics Samsung Electro-Mechanics Samsung Electro-Mechanics
Package TSOP-54 TSSOP54 TSOP-54
Description PDSO54 Synchronous DRAM chip offering 4MX16 storage and operating at 5.4ns speed in CMOS technology 4M x 16 SDRAM in TSOP plastic packaging Advanced semiconductor device for data processing
Stock 5452 4793 4781
Rohs Code Yes No Yes
Part Life Cycle Code Obsolete Obsolete Obsolete
Reach Compliance Code compliant
ECCN Code EAR99 EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5 ns 5 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz 166 MHz 166 MHz
I/O Type COMMON COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 Code R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
JESD-609 Code e6 e0 e6
Length 22.22 mm 22.22 mm 22.22 mm
Memory Density 67108864 bit 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16 16
Number of Functions 1 1 1
Number of Ports 1 1 1
Number of Terminals 54 54 54
Number of Words 4194304 words 4194304 words 4194304 words
Number of Words Code 4000000 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C 70 °C
Organization 4MX16 4MX16 4MX16
Output Characteristics 3-STATE 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP2 TSOP2 TSOP2
Package Equivalence Code TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32
Package Shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Power Supplies 3.3 V 3.3 V 3.3 V
Qualification Status Not Qualified Not Qualified Not Qualified
Refresh Cycles 4096 4096 4096
Seated Height-Max 1.2 mm 1.2 mm 1.2 mm
Self Refresh YES YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.001 A 0.001 A 0.001 A
Supply Current-Max 0.085 mA 0.16 mA 0.1 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V 3.3 V
Surface Mount YES YES YES
Technology CMOS CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL COMMERCIAL
Terminal Finish TIN BISMUTH TIN LEAD TIN BISMUTH
Terminal Form GULL WING GULL WING GULL WING
Terminal Pitch 0.8 mm 0.8 mm 0.8 mm
Terminal Position DUAL DUAL DUAL
Width 10.16 mm 10.16 mm 10.16 mm
Moisture Sensitivity Level 3 3
Peak Reflow Temperature (Cel) 260 260
Pbfree Code Yes
Part Package Code TSOP2
Pin Count 54
All

Part Number

Start with: K4S64

Part Number "K4S64" returned 20 results; all results matched and started with "K4S64".

Part Number Description Brand Package/Case Lifecycle Status Cargo cycle In Stock Operation
K4S641632N-LC75

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54

Samsung Electro-Mechanics TSOP-54 3~7 Days 6,367.00
K4S643232H-UC60

86 Pin Plastic TSSOP

Samsung Electro-Mechanics TSSOP-86 3~7 Days 6,981.00
K4S641632H-TC75

SDRAM, 4M x 16, 54 Pin, Plastic, TSOP

Samsung Electro-Mechanics TSOP-54 3~7 Days 6,058.00
K4S641632F-TC75

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Samsung Electro-Mechanics TSOP-54 3~7 Days 6,862.00
K4S641632F-TC60

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Samsung Electro-Mechanics TSOP54 3~7 Days 7,864.00
K4S641632N-LC60

High-speed Synchronous DRAM with 4MX16 memory array and 5ns timing in a CMOS package

Samsung Electro-Mechanics TSOP-54 3~7 Days 5,611.00
K4S641632H-UC60

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54

Samsung Electro-Mechanics TSOP-54 3~7 Days 6,187.00
K4S641632H-UC75

This IC-KH-UC product is a high-quality, low-power consumption memory module suitable for various application

Samsung Electro-Mechanics TSOP-54 3~7 Days 7,193.00
K4S641632K

The K4S641632K is a 64Mb synchronous DRAM chip with a speed of 133MHz.

Sanyo Denki TQFP 3~7 Days 4,724.00
K4S641632N-LI60000

Suitable for a wide range of industries, including gaming and computing

Samsung Electronics TSOP-II 3~7 Days 7,356.00
K4S641632K-UI60000

Enhanced storage capacity for demanding computing needs

Samsung Electronics TSOP-II 3~7 Days 6,714.00
K4S641632F-TC60T00

Advanced technology enables fast and efficient data access

Samsung Electronics TSOP-II 3~7 Days 2,668.00
K4S641632F-TI75

Reliable and fast, this 64Mb SDRAM chip runs at 133MHz on 3.3V power

Samsung Electro-Mechanics TSOP-54 3~7 Days 3,629.00
K4S643232E-TC60

Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86

Samsung Semiconductor 3~7 Days 5,524.00
K4S643232C-TC70

DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II

Samsung Semiconductor 3~7 Days 6,826.00
K4S641632E-TC75000

Ideal for high-density storage applications, this chip offers reliable and efficient data handling

Samsung Electronics TSOP-II 3~7 Days 2,369.00
K4S641632N-LI75T00

Streamline your data storage needs with this efficient and compact SDRAM chi

Samsung Electronics TSOP-II 3~7 Days 5,062.00
K4S640430D-TC1H

SAMSUNG SOP-54L 3~7 Days 415.00
K4S640432C-TC80

SAMSUNG TSSOP 3~7 Days 1.00
K4S640432D-TC1H

SAMSUNG SSOP-54 3~7 Days 18,000.00