ZXMN6A11GTA

Name: ZXMN6A11GTA
Brand: Diodes Incorporated
Rating: 4.5 (10 reviews)
Author: Lisleapex

Enhancement Mode Transistor in SOT-223 Package

3,695 Effective Inventory

ZXMN6A11GTA

Effective Inventory3,695

Enhancement Mode Transistor in SOT-223 Package

Manufacturer Part # : ZXMN6A11GTA
Package/Case: SOT-223-3
Brand: Diodes Incorporated
Product Categories : Single FETs, MOSFETs
Series : ZXMN6

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ZXMN6A11GTA DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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ZXMN6A11GTA Details

The ZXMN6A11GTA is a high-performance N-channel enhancement mode MOSFET from Diodes Incorporated, designed for efficient power switching applications. This MOSFET offers low on-state resistance and fast switching capabilities, making it suitable for power management and motor control tasks.

Pinout

1 (G): Gate
2 (D): Drain
3 (S): Source
4 (S): Source (Exposed Pad)

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

Low On-State Resistance: Provides efficient power switching with minimal voltage drop.
Fast Switching Speed: Capable of high-speed switching for responsive power control.
High Power Dissipation: Designed to handle high power dissipation for rugged applications.
Enhancement Mode: Operates in enhancement mode for easy integration into circuits.
Low Gate Threshold Voltage: Allows for easy gate control and drive.

Application

Power Management: Ideal for power switching and management in various electronic systems.
Motor Control: Used in motor control circuits for efficient power modulation.
DC-DC Converters: Suitable for use in DC-DC converter circuits for voltage regulation.

Where to Use

The ZXMN6A11GTA is suitable for applications that require efficient power switching and fast response times. It is commonly used in power management systems, motor control circuits, and voltage regulation applications.

How to Use

Connect the ZXMN6A11GTA to your circuit by wiring the gate, drain, and source pins to the appropriate connections in your system. Ensure proper gate drive voltage for efficient switching and power management. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the ZXMN6A11GTA illustrates how to integrate the MOSFET into your power switching or motor control system. It includes connections for gate drive, load, and power supply, ensuring proper operation and efficient power switching.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

IRF9540N: A similar N-channel MOSFET offering comparable performance and voltage ratings.
FQP30N06L: An alternative N-channel MOSFET with equivalent power switching capabilities.

Complementary

The ZXMN6A11GTA can be complemented by the ZXMN6A25GTA, which offers higher voltage and current ratings for more demanding power control applications.

When selecting complementary MOSFETs, ensure their specifications align with your specific application requirements for optimal power management and efficiency.

Frequently Asked Questions

Q: What is the maximum power dissipation of the ZXMN6A11GTA?

A: The ZXMN6A11GTA can handle power dissipation up to a specified limit. For more details, refer to the datasheet for specific operating conditions and limitations.

Q: Can the ZXMN6A11GTA be used in high-frequency switching applications?

A: Yes, the ZXMN6A11GTA is capable of fast switching speeds, making it suitable for high-frequency power switching applications with proper design considerations.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
REACH	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	SOT-223-3
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	4.4 A
Rds On - Drain-Source Resistance	120 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	5.7 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature !	+ 150 C
Pd - Power Dissipation	3.9 W	Channel Mode	Enhancement
Series	ZXMN6A1	Brand	Diodes Incorporated
Configuration	Single	Fall Time	4.6 ns
Forward Transconductance - Min	4.9 S	Height	1.65 mm
Length	6.7 mm	Product Type !	MOSFET
Rise Time !	3.5 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	8.2 ns
Typical Turn-On Delay Time	1.95 ns	Width	3.7 mm
Unit Weight	0.003951 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification ZXMN6A11GTA PDF Download

FAQs

What is ZXMN6A11GTA?

The ZXMN6A11GTA is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Diodes Incorporated. It is suitable for a wide range of applications, including power management, load switching, and motor control.

How Does ZXMN6A11GTA Work?

The ZXMN6A11GTA operates as a power MOSFET, allowing the control of high currents with low input power. It acts as a switch, enabling or disabling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. This switching functionality makes it ideal for power control applications.

How Many Pins does ZXMN6A11GTA have and What are the Functions of the Pinout Configuration?

The ZXMN6A11GTA is housed in a 6-pin SOT-223 (Surface-Mounted Device Outline Transistor) package. The pinout configuration includes:

GATE: Gate terminal for controlling the MOSFET operation.
DRAIN: Drain terminal where the output current flows through.
SOURCE: Source terminal, the reference point for the output current.
GND: Ground connection for the device.
N/C: No connection pin.

What are the Pros and Cons of ZXMN6A11GTA?

Pros:

High Current Handling: Capable of handling high currents in power applications.
Low On-Resistance: Provides efficient power transfer with low voltage drop.
Compact Package: SOT-223 package offers space-efficient mounting on PCBs.
Simple Drive Requirements: Easy to control with low gate threshold voltage.

Cons:

Gate Charge: May require proper drive circuitry to manage gate charge for optimal performance.
Heat Dissipation: Needs proper thermal management for high-power applications to prevent overheating.

Are There Any Equivalents/Alternatives to ZXMN6A11GTA for Recommendation?

The SUP75P03-07 from Vishay and the SI2302CDS-T1-GE3 from Vishay are alternatives to the ZXMN6A11GTA.
Equivalents to the ZXMN6A11GTA include the IRF7309TRPBF from Infineon Technologies and the SI4832DY-T1-E3 from Vishay.

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