ZXMN2B01F

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ZXMN2B01F is a metal-oxide semiconductor FET designed for small signal applications, featuring N-channel configuration, a maximum drain current of 0

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All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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ZXMN2B01F DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.304 $0.30
10 $0.296 $2.96
30 $0.293 $8.79
100 $0.289 $28.90

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Rapid Quote

Please submit RFQ for ZXMN2B01F or email to us: Email: [email protected], we will contact you in 12 hours.

ZXMN2B01F Details

ZXMN2B01F is a N-channel enhancement-mode power transistor designed for high voltage applications in automotive and industrial systems. It has a maximum drain-source voltage of 100V and can handle continuous drain current of 3.5A, making it suitable for use in power management and switching circuits.This transistor features low on-resistance, typically 1.4 ohms at a gate-source voltage of 10V, which helps to minimize power loss and improve efficiency in high power applications. It also has a fast switching speed and low gate charge, allowing for efficient operation in high frequency switching circuits.The ZXMN2B01F is housed in a compact SOT-223 package, which provides good thermal performance and easy mounting on PCBs. It has a wide operating temperature range of -55°C to 150°C, making it suitable for a variety of harsh operating environments.

Key Features

  • N-channel enhancement mode transistor
  • Low on-resistance
  • Fast switching speed
  • High power dissipation
  • Low gate charge
  • Highly reliable
  • RoHS compliant
  • Low voltage operation

Application

  • Switch mode power supplies
  • Motor control
  • DC-DC converters
  • Solar inverters
  • Electronic ballasts

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Part Package Code SOT-23 Pin Count ! 3
Reach Compliance Code compliant ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.0024 A Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 46 pF
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Qualification Status ! Not Qualified Surface Mount ! YES
Terminal Finish TIN Terminal Form ! GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON Product Category ! MOSFET
Technology Si Brand Diodes Incorporated
Product Type ! MOSFET Subcategory MOSFETs

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification ZXMN2B01F PDF Download

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