ZXM61P03FTA

Effective Inventory5,948

SOT23 P-Channel 30V MOSFET

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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ZXM61P03FTA DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
5 $0.141 $0.70
50 $0.114 $5.70
150 $0.102 $15.30
500 $0.087 $43.50
3000 $0.077 $231.00
6000 $0.073 $438.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Rapid Quote

Please submit RFQ for ZXM61P03FTA or email to us: Email: [email protected], we will contact you in 12 hours.

ZXM61P03FTA Details

The ZXM61P03FTA is an N-channel MOSFET from Zetex Semiconductor designed for efficient power switching applications. This device features a low on-resistance and high-speed switching capabilities, making it suitable for power management solutions in various electronic circuits. It is housed in a compact TO-220 package which enables effective heat dissipation, ensuring reliable operation under load conditions.

Pinout

  • 1 (G): Gate
  • 2 (D): Drain
  • 3 (S): Source

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-Resistance: Minimal resistance for efficient power transmission and reduced heat generation.
  • High-Speed Switching: Suitable for fast switching applications with quick response times.
  • Compact Package: TO-220 package provides ease of mounting and improved thermal dissipation.
  • High Voltage Rating: Designed to handle high voltages, ensuring durability in various applications.
  • Easy to Drive: Compatible with standard gate drive circuits for straightforward integration.

Application

  • Power Management: Ideal for use in power supply circuits and voltage regulation applications.
  • Motor Control: Suitable for driving motors in industrial and consumer products.
  • DC-DC Converters: Utilized in buck and boost converter designs for efficient power conversion.

Where to Use

The ZXM61P03FTA is suitable for applications requiring high efficiency power switching. It is commonly used in power supply circuits, motor drivers, and DC-DC converters where efficiency and speed are critical.

How to Use

To use the ZXM61P03FTA, connect the gate to a drive voltage that meets the specification for switching on the MOSFET. Connect the drain to the positive voltage source and the source to the load. Properly manage the gate signal to control the switching of the device. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the ZXM61P03FTA illustrates how to integrate the MOSFET into a power management system. It includes connections to the power source, load, and gate drive circuitry.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IRF540: A similar N-channel MOSFET offering comparable performance characteristics.
  • STP16NF06: Another alternative MOSFET that provides equivalent functionalities.

Complementary

The ZXM61P03FTA can be complemented by the ZXM31P03FTA, which is a P-channel MOSFET suitable for use in complementary push-pull configurations in power circuits.

When selecting complementary MOSFETs, ensure that their specifications and electrical characteristics align with your application requirements for optimal performance.

Frequently Asked Questions

Q: What is the maximum current rating for the ZXM61P03FTA?

A: The ZXM61P03FTA has a maximum continuous drain current rating. For more details, refer to the datasheet for specific limit conditions.

Q: Can the ZXM61P03FTA be used in high-frequency applications?

A: Yes, the ZXM61P03FTA is designed for high-speed switching applications and can be effectively used in high-frequency scenarios. Ensure proper gate drive circuits are used for efficiency.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.1 A Rds On - Drain-Source Resistance 350 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 4.8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 806 mW
Channel Mode Enhancement Series ZXM61P03
Brand Diodes Incorporated Configuration Single
Fall Time 5 ns Forward Transconductance - Min 0.44 S
Height 1.02 mm Length 3.04 mm
Product MOSFET Small Signal Product Type ! MOSFET
Rise Time ! 2.9 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 8.9 ns
Typical Turn-On Delay Time 1.9 ns Width 1.4 mm
Unit Weight 0.000282 oz

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