VP2450N8-G
0.16A, 500V, 30ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AAVP2450N8-G
0.16A, 500V, 30ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA
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Manufacturer Part # : VP2450N8-G
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Package/Case: SOT-89
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Brand: Microchip Technology
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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VP2450N8-G DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
VP2450N8-G Description
The VP2450N8-G is a high-performance power field-effect transistor from Microchip Technology, designed for reliable voltage and current control in various applications. This device features low electromagnetic emission and radiation, fast fault detection and protection scheme, and high isolation between channels, making it suitable for demanding industrial and automotive environments.
Pin Details
The VP2450N8-G is a compact power transistor with 4 pins for voltage and current control. It includes pins for input, output, and enable signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (Input): Input signal for the transistor
- Pin 2 (Output): Output signal from the transistor
- Pin 3 (Enable): Enable signal to control the transistor's operation
- Pin 4 (GND/VCC): Ground and positive power supply connections
Features
- Low Electromagnetic Emission and Radiation: Minimizes interference with other devices and systems.
- Fast Fault Detection and Protection Scheme: Ensures reliable operation and protects against faults.
- High Isolation between Channels: Prevents cross-talk and ensures accurate signal transmission.
- Precise Control of Voltage and Current: Allows for precise control over the transistor's operation.
- Low Loss and High Q Inductive Behavior: Enables efficient energy transfer and minimizes losses.
Applications
The VP2450N8-G is suitable for various applications that require reliable voltage and current control, including industrial automation systems, automotive electronics, and power supplies.
Where to Use:
- Industrial automation systems
- Automotive electronics
- Power supplies
- Motor control systems
Manufacturer
The VP2450N8-G is manufactured by Microchip Technology, a leading provider of semiconductor solutions.
This product was developed to meet the growing demand for reliable and efficient power management in various industries, including industrial automation, automotive, and consumer electronics.
Packages
The VP2450N8-G comes in a compact SOIC-8 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of VP2450N8-G
- MCP6V51: A comparable power transistor from Microchip Technology with similar features and performance.
- NXP PCA9545: An alternative power transistor from NXP that offers equivalent functionality.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8541.29.00.95 | Factory Lead Time | 52 Weeks |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 500 V | Drain Current-Max (ID) | 0.16 A |
Drain-source On Resistance-Max | 30 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 20 pF | JEDEC-95 Code | TO-243AA |
JESD-30 Code | R-PSSO-F3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 1.6 W |
Pulsed Drain Current-Max (IDM) | 0.8 A | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | MATTE TIN |
Terminal Form ! | FLAT | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 70 ns |
Turn-on Time-Max (ton) | 35 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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