TSM250N02DCQ RFG

Dual N-Channel Power MOSFET, 20V, 5.8A
7,733 Effective Inventory

TSM250N02DCQ RFG

Effective Inventory7,733

Dual N-Channel Power MOSFET, 20V, 5.8A

  • Manufacturer Part # : TSM250N02DCQ RFG

  • Package/Case: TDFN-6

  • Part Status : ACTIVE

  • Brand: Taiwan Semiconductor Corporation

  • Product Categories : FET, MOSFET Arrays

  • Series : TSM250

  • RoHS:

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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TSM250N02DCQ RFG DataSheet
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Please submit RFQ for TSM250N02DCQ RFG or email to us: Email: [email protected], we will contact you in 12 hours.

TSM250N02DCQ RFG Description

The TSM250N02DCQ RFG is a high-performance RFG chip from Taiwan Semiconductor, designed for wireless communication applications. This device is ideal for RF power amplifiers, featuring high power density, high efficiency, and optimized performance for RF energy applications.

Features

  • High Power Density: Optimized for RF energy applications
  • High Efficiency: Ensures reliable performance
  • Optimized Performance: For wireless communication applications
  • Operating Frequency Up to 10MHz: Enables high-speed data transmission
  • Easily Scalable for Higher Power Levels: Allows for flexible design options
  • Low Thermal Resistance: Minimizes heat generation
  • Low System Cost: Reduces overall system expense

Applications

The TSM250N02DCQ RFG is commonly used in wireless communication systems that require high-performance RF amplifiers, generators, plasma sources, heaters, therapy devices, ablation systems, and industrial equipment.

Where to Use:

  • RF power amplifiers
  • RF generators
  • RF plasma sources
  • RF heaters
  • RF therapy devices
  • RF ablation systems
  • RF communication systems
  • RF medical equipment
  • RF industrial equipment
  • RF testing and measurement equipment

Manufacturer

The TSM250N02DCQ RFG is manufactured by Taiwan Semiconductor, a leading provider of semiconductor components. This company has extensive experience in designing and manufacturing high-performance RF amplifiers for various applications.

Packages

The TSM250N02DCQ RFG comes in an unspecified package. This package is designed to provide a compact and efficient solution for integrating the chip into electronic circuits.

FAQ

Q: What is the operating frequency range of the TSM250N02DCQ RFG?
A: It operates within an unspecified frequency range, optimized for wireless communication applications.

Q: How does the TSM250N02DCQ RFG handle thermal resistance?
A: It features low thermal resistance to minimize heat generation and ensure reliable performance.

Q: Can the TSM250N02DCQ RFG be used in industrial equipment applications?
A: Yes, it is designed for use in various industrial equipment applications that require high-performance RF amplifiers.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Technology Si
Configuration Dual FET Feature Standard
Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 775pF @ 10V
Power - Max 620mW (Tc) Operating Temperature ! -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case TDFN-6
Supplier Device Package 6-TDFN (2x2) Base Product Number TSM250
Manufacturer Taiwan Semiconductor Product Category ! MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 5.8 A
Rds On - Drain-Source Resistance 20 mOhms Vgs - Gate-Source Voltage - 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage 400 mV Qg - Gate Charge 7.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Pd - Power Dissipation 620 mW Channel Mode Enhancement
Brand Taiwan Semiconductor Fall Time 7.6 ns
Moisture Sensitive Yes Product Type ! MOSFET
Rise Time ! 11.6 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 23.9 ns Typical Turn-On Delay Time 4.1 ns
Part # Aliases TSM250N02DCQ Unit Weight 0.002180 oz

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