TSM250N02DCQ

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Dual N-Channel Power MOSFET

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TSM250N02DCQ DataSheet

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TSM250N02DCQ Description

The TSM250N02DCQ is a 250mΩ, 25V power MOSFET from Taiwan Semiconductor, designed for load switch and power management applications. This device is ideal for solar power systems, energy storage systems, electric vehicle charging systems, power supplies, uninterruptible power supplies (UPS), motor drives, industrial automation systems, wind energy systems, and electric grid infrastructure.

Pin Details

The TSM250N02DCQ is a low-power MOSFET with 6 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • VCC: Positive Power Supply
  • GND: Ground
  • DRAIN: Drain Pin
  • SOURCE: Source Pin
  • GATE: Gate Input
  • EN: Enable Input

Features

  • Low on-resistance: Offers low power consumption and high current rating.
  • High current rating: Supports high-power applications with a maximum drain current of 25A.
  • High power dissipation: Handles high power dissipation, making it suitable for demanding applications.
  • Low gate charge: Reduces the input capacitance and improves switching performance.
  • Low threshold voltage: Ensures reliable operation with a low threshold voltage of 2V.

Applications

The TSM250N02DCQ is suitable for various applications, including solar power systems, energy storage systems, electric vehicle charging systems, power supplies, uninterruptible power supplies (UPS), motor drives, industrial automation systems, wind energy systems, and electric grid infrastructure.

Where to Use:

  • Solar power systems
  • Energy storage systems
  • Electric vehicle charging systems
  • Power supplies
  • Uninterruptible power supplies (UPS)
  • Motor drives
  • Industrial automation systems
  • Wind energy systems
  • Electric grid infrastructure

Manufacturer

The TSM250N02DCQ is manufactured by Taiwan Semiconductor, a global leader in semiconductor technology.

Packages

The TSM250N02DCQ comes in an SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the MOSFET into electronic circuits.

Equivalent Parts of TSM250N02DCQ

  • NXP BUK240-50A: A comparable power MOSFET from NXP with similar features and performance.
  • Infineon IPS130N04L: An alternative power MOSFET from Infineon that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays Mfr Taiwan Semiconductor Corporation
Series - Package Tape & Reel (TR)Cut Tape (CT)®
Product Status Active Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) FET Feature Standard
Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 775pF @ 10V
Power - Max 620mW (Tc) Operating Temperature ! -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case 6-VDFN Exposed Pad
Supplier Device Package 6-TDFN (2x2) Base Product Number TSM250

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification TSM250N02DCQ PDF Download

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