SUM45N25-58-E3
N-MOSFET TransistorSUM45N25-58-E3
N-MOSFET Transistor
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Manufacturer Part # : SUM45N25-58-E3
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Package/Case: TO-263-3
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Part Status : Active
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Brand: Vishay
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Product Categories : Single FETs, MOSFETs
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SUM45N25-58-E3 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $3.377 | $3.38 |
10 | $3.299 | $32.99 |
30 | $3.246 | $97.38 |
100 | $3.194 | $319.40 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
SUM45N25-58-E3 Details
The SUM45N25-58-E3 is a power MOSFET from Vishay Siliconix, designed for high-efficiency power switching applications. This MOSFET offers a low on-resistance and high current capability, making it suitable for power supplies, motor control, and other high-power electronic circuits.
Pinout
- 1 (G): Gate
- 2 (D): Drain
- 3 (S): Source
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Low On-Resistance: Provides efficient power switching with minimal voltage drop.
- High Current Capability: Capable of handling high currents for power-hungry applications.
- Fast Switching Speed: Offers fast turn-on and turn-off times for optimized performance.
- High Efficiency: Enables efficient power conversion with low power dissipation.
- Robust Design: Designed for reliable operation in demanding environments.
Application
- Power Supplies: Ideal for use in power supply circuits for efficient power management.
- Motor Control: Used in motor control systems for precise and efficient motor operation.
- Power Inverters: Suitable for power inverter applications where high efficiency is crucial.
Where to Use
The SUM45N25-58-E3 is recommended for applications requiring high-efficiency power switching, such as power supplies, motor control, and power inverters. It is suitable for systems where low on-resistance and high current capability are essential.
How to Use
Connect the SUM45N25-58-E3 to your circuit by wiring the Gate, Drain, and Source pins accordingly. Take care to ensure proper gate drive voltage and current handling capabilities. For detailed usage instructions, consult the datasheet.
Application Circuit
The application circuit diagram for the SUM45N25-58-E3 illustrates the proper connections for integrating the MOSFET into your power electronics system. It includes connections for the gate, drain, and source terminals, ensuring optimal performance and reliability.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- IRF3205: An alternative power MOSFET with similar specifications and performance characteristics.
- FDP8878: A comparable MOSFET offering from Fairchild Semiconductor.
Complementary
The SUM45N25-58-E3 can be complemented by the SUM90N20-54-E3, which provides higher current-handling capabilities for even more demanding power applications.
When selecting complementary MOSFETs, ensure compatibility and performance alignment with your specific application requirements.
Frequently Asked Questions
Q: What is the maximum current rating of the SUM45N25-58-E3?
A: The SUM45N25-58-E3 can handle a maximum current of up to 45A. Refer to the datasheet for detailed operating conditions.
Q: Is the SUM45N25-58-E3 suitable for high-frequency switching applications?
A: Yes, the SUM45N25-58-E3 is suitable for high-frequency switching due to its fast switching speed and robust design.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 250 V | Id - Continuous Drain Current | 45 A |
Rds On - Drain-Source Resistance | 58 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 140 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
Pd - Power Dissipation | 375 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SUM |
Brand | Vishay / Siliconix | Configuration | Single |
Product Type ! | MOSFET | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Part # Aliases | SUM45N25-58 |
Unit Weight | 0.139332 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SUM45N25-58-E3?
The SUM45N25-58-E3 is a 250V, 45A N-channel enhancement mode power MOSFET designed by Vishay Siliconix. It is ideal for high-current, high-efficiency power switching applications such as power supplies, motor control, and inverters.
How Does SUM45N25-58-E3 Work?
The SUM45N25-58-E3 operates as a power switch, allowing or disallowing the flow of high currents based on the voltage applied to the gate terminal. When the gate-source voltage exceeds the threshold, the MOSFET turns on and conducts current between the drain and source, enabling power control and switching in various electronic circuits.
How Many Pins does SUM45N25-58-E3 have and What are the Functions of the Pinout Configuration?
The SUM45N25-58-E3 is housed in a TO-263 package. The pinout configuration includes:
- GATE: Gate control pin for turning the MOSFET on and off.
- DRAIN: Terminal for high-current carrying capability.
- SOURCE: Terminal connected to the ground or return path for the current.
What are the Pros and Cons of SUM45N25-58-E3?
Pros:
- High Current Capability: Designed to handle high continuous and pulsed currents for power applications.
- Low ON Resistance: Offers low conduction losses and high efficiency.
- Fast Switching Speed: Enables rapid power switching for improved system performance.
- TO-263 Package: Provides efficient heat dissipation and ease of mounting.
Cons:
- Threshold Voltage: Requires a sufficient gate-source voltage to achieve full conduction, which may affect drive circuit design.
- Gate Drive Consideration: Needs careful attention to gate drive voltage, current, and transient behavior for reliable operation.
Are There Any Equivalents/Alternatives to SUM45N25-58-E3 for Recommendation?
- The IRFP250N from Infineon is a similar N-channel power MOSFET suitable for high-current applications.
- Alternatives to the SUM45N25-58-E3 include the FDP7030BL from Fairchild Semiconductor and the STW45NM50 from STMicroelectronics.
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Price details
Prices listed do not include VAT.
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