SUD50P10-43L-GE3

Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
6,205 Effective Inventory

SUD50P10-43L-GE3

Effective Inventory6,205

Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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SUD50P10-43L-GE3 DataSheet
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SUD50P10-43L-GE3 Description

The SUD50P10-43L-GE3 is a P-channel TO-252-2 MOSFET from Vishay Intertech, designed for reliable performance in various electronic applications. This device features high current handling and low voltage operation making it suitable for compact circuit designs.

Pin Details

The SUD50P10-43L-GE3 is a single FET with 5 pins for easy integration into electronic circuits. It includes pins for the drain, source, gate, and power connections.

Pin configuration

  • Pin 1 (Drain): Drain terminal
  • Pin 2 (Source): Source terminal
  • Pin 3 (Gate): Gate terminal
  • Pin 4 (VCC): Positive Power Supply
  • Pin 5 (GND): Ground

Features

  • 100V Operating Voltage: Designed to operate within a wide voltage range, suitable for various electronic applications.
  • 37.1A Current Handling: Offers high current handling for reliable performance in demanding applications.
  • 43mΩ@10V Specific Resistance: Provides low specific resistance for efficient power transmission and minimal heat generation.

Applications

The SUD50P10-43L-GE3 is commonly used in various applications where high current handling, low voltage operation, and compact package design are essential, such as in industrial control systems or automotive electronics.

Where to Use:

  • Industrial control systems
  • Automotive electronics
  • Battery-powered devices
  • Power supplies
  • Data transmission systems

Manufacturer

The SUD50P10-43L-GE3 is manufactured by Vishay Intertech, a well-established global leader in semiconductor technology. This product falls under the category of discrete semiconductor products, specifically designed for reliable performance and efficient power transmission.

This product was developed to meet the growing demand for high-performance MOSFETs with low voltage operation and compact package design, making it suitable for various electronic applications where reliability and efficiency are essential.

Packages

The SUD50P10-43L-GE3 comes in a TO-252-2 package, designed for surface-mount technology. This package is optimized for efficient integration into electronic circuits while providing reliable thermal performance.

SUD50P10-43L-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 61 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 36.4 A Drain-source On Resistance-Max 0.043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ! ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Pulsed Drain Current-Max (IDM) 40 A
Surface Mount ! YES Terminal Finish Matte Tin (Sn)
Terminal Form ! GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SUD50P10-43L-GE3 PDF Download

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