SSS7N60

Name: SSS7N60
Brand: Fairchild Semiconductor
Rating: 4.5 (10 reviews)
Author: Lisleapex

Power Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

4,361 Effective Inventory

SSS7N60

Effective Inventory4,361

Power Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Manufacturer Part # : SSS7N60
Package/Case: TO-220
Brand: Fairchild Semiconductor

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SSS7N60 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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SSS7N60 Details

The SSS7N60 is a monolithic integrated circuit (IC) designed and manufactured by Samsung Semiconductor. It is a Power Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN.

The SSS7N60 is a power transistor IC that is designed to provide high current and voltage capabilities for various applications. It features an N-channel metal-oxide semiconductor (MOS) field-effect transistor with a maximum drain current of 4A and a maximum drain-source voltage of 600V.

SSS7N60 Key Features

High current capability: up to 4A
High voltage capability: up to 600V
N-channel metal-oxide semiconductor (MOS) field-effect transistor
TO-220AB and TO-220 package options

SSS7N60 Product Usage

The SSS7N60 is a versatile power transistor IC that can be used in various applications, including:

Power Supply Applications:

DC/DC converters for automotive and industrial applications
LED lighting systems
Portable electronic devices

SSS7N60 Circuit Diagram

A sample circuit diagram using the SSS7N60 might involve:

Power Supply: Connect a suitable voltage supply to the drain pin.
Load Connection: Connect the load (e.g. motor, LED) between the source and drain pins.
Gate Control: Apply a control signal to the gate pin to turn the transistor on or off.

Before designing a specific circuit, it is essential to refer to the manufacturer's datasheet and application notes to ensure correct implementation and to understand all the specifications, electrical characteristics, and protective features of the SSS7N60.

SSS7N60 Quality and Reliability

Samsung Semiconductor's commitment to quality ensures that the SSS7N60 IC is reliable and performs consistently. It is designed to meet the stringent requirements of industrial and commercial applications, where consistent operation and long service life are critical.

SSS7N60 Ordering Information

The SSS7N60 is available in TO-220AB and TO-220 package options, facilitating efficient assembly for high-volume production. Its product identification, including the temperature range and package type, is clearly specified for ease of ordering.

SSS7N60 Package and Quality

The SSS7N60 is housed in a compact, thermally efficient TO-220AB and TO-220 package, making it suitable for space-constrained designs without compromising on thermal management or performance. Samsung Semiconductor ensures that each unit undergoes rigorous testing to meet stringent industrial standards. This emphasis on quality guarantees that the SSS7N60 delivers dependable, long-term performance across a wide range of operational environments.

Conclusion

The SSS7N60 from Samsung Semiconductor is an ideal choice for engineers seeking a reliable power transistor IC for high current and voltage applications. With its versatile functionality, high current capability, and compact package options, it is well-suited for various industrial and commercial applications. Whether used in DC/DC converters, LED lighting systems, or portable electronic devices, the SSS7N60 provides robust performance and flexibility, making it a valuable component for demanding power supply applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code	Obsolete	Part Package Code	SFM
Pin Count !	3	ECCN Code	EAR99
Case Connection	ISOLATED	Configuration	SINGLE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (Abs) (ID)	4 A
Drain Current-Max (ID)	4 A	Drain-source On Resistance-Max	1.8 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Mode !	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	42 W
Qualification Status !	Not Qualified	Surface Mount !	NO
Terminal Form !	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SSS7N60 PDF Download