SSS4N60

Power Field-Effect Transistor, 2.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
6,711 Effective Inventory

SSS4N60

Effective Inventory6,711

Power Field-Effect Transistor, 2.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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SSS4N60 DataSheet
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SSS4N60 Description

The SSS4N60 is a Power Field-Effect Transistor from Samsung Semiconductor, designed for reliable power control in various applications. This device features high current handling, low voltage drop, and fast switching times, making it suitable for use in industrial automation, motor drives, and other power management systems.

Pin Details

The SSS4N60 is a 3-pin N-Channel Power Field-Effect Transistor with a TO-220AB package. It includes pins for the drain (D), gate (G), and source (S) connections, as well as a pin for the substrate (SUB).

Pin configuration

  • D: Drain
  • G: Gate
  • S: Source
  • SUB: Substrate

Features

  • High Current Handling: Handles up to 2.3A of current, making it suitable for demanding power control applications.
  • Low Voltage Drop: Features a low voltage drop, reducing energy losses and increasing overall system efficiency.
  • Fast Switching Times: Offers fast switching times, allowing for rapid response to changing load conditions.

Applications

The SSS4N60 is commonly used in industrial automation systems, motor drives, and other power management applications where high current handling and low voltage drop are essential.

Where to Use:

  • Industrial automation systems
  • Motor drives
  • Power management systems

Manufacturer

The SSS4N60 is manufactured by Samsung Semiconductor, a leading provider of semiconductor solutions for various industries.

Packages

The SSS4N60 comes in a TO-220AB package, making it suitable for use in a variety of applications and systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Obsolete Part Package Code SFM
Pin Count ! 3 ECCN Code EAR99
Case Connection ISOLATED Configuration SINGLE
DS Breakdown Voltage-Min 600 V Drain Current-Max (Abs) (ID) 2.7 A
Drain Current-Max (ID) 2.3 A Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 35 W
Qualification Status ! Not Qualified Surface Mount ! NO
Terminal Form ! THROUGH-HOLE Terminal Position SINGLE
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SSS4N60 PDF Download

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