SSP6N60

Power Field-Effect Transistor, 6A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
3,249 Effective Inventory

SSP6N60

Effective Inventory3,249

Power Field-Effect Transistor, 6A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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Service & Packaging

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SSP6N60 DataSheet
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SSP6N60 Description

The SSP6N60 is a Power Field-Effect Transistor from Samsung Semiconductor, designed for high-performance applications that require low voltage and current control. This device is ideal for industrial automation, motor drives, and power supplies, featuring a high current rating, fast switching times, and a compact package.

Pin Details

The SSP6N60 is a N-Channel Power MOSFET with 3 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • VCC: Positive Power Supply
  • GND: Ground
  • D: Driver Output Enable

Features

  • High Current Rating: Handles up to 6A of current, making it suitable for demanding applications.
  • Fast Switching Times: Offers switching times as low as 100ns, ensuring reliable performance in high-frequency applications.
  • Low Voltage Control: Operates at a low voltage of 600V, making it suitable for industrial automation and motor drives.

Applications

The SSP6N60 is commonly used in systems that require high-performance power control, such as industrial automation, motor drives, and power supplies.

Where to Use:

  • Industrial automation systems
  • Motor drives for robotics and manufacturing
  • Power supplies for data centers and telecommunications

Manufacturer

The SSP6N60 is manufactured by Samsung Semiconductor, a global leader in semiconductor technology.

Packages

The SSP6N60 comes in an TO-220AB package, making it suitable for compact circuit designs and easy integration into electronic systems.

Equivalent Parts of SSP6N60

  • FQP50N60C: A comparable Power MOSFET from Fairchild Semiconductor with similar features and performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Obsolete Part Package Code SFM
Pin Count ! 3 ECCN Code EAR99
HTS Code ! 8541.29.00.95 Avalanche Energy Rating (Eas) 570 mJ
Configuration SINGLE DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 6 A Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 1.8 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W Pulsed Drain Current-Max (IDM) 24 A
Qualification Status ! Not Qualified Surface Mount ! NO
Terminal Form ! THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 320 ns Turn-on Time-Max (ton) 210 ns

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SSP6N60 PDF Download

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