SMMBT3906LT3G
Bipolar Transistors - BJT SS GP XSTR SPCL TRSMMBT3906LT3G
Bipolar Transistors - BJT SS GP XSTR SPCL TR
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Manufacturer Part # : SMMBT3906LT3G
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Package/Case: SOT23-3
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Part Status : ACTIVE
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Brand: Onsemi
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Product Categories : Single Bipolar Transistors
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Series : SMMBT3906
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Service & Packaging
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About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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SMMBT3906LT3G DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
10 | $0.059 | $0.59 |
100 | $0.047 | $4.70 |
300 | $0.041 | $12.30 |
1000 | $0.037 | $37.00 |
5000 | $0.033 | $165.00 |
10000 | $0.032 | $320.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
SMMBT3906LT3G Details
The SMMBT3906LT3G is a high-performance NPN transistor from ON Semiconductor, designed for low-power switching and amplification applications. This device features a low collector-emitter saturation voltage and a high current gain, making it suitable for various electronic circuits. Its compact SOT-23 packaging allows for easy integration into space-constrained designs.
Pinout
- 1 (B): Base
- 2 (C): Collector
- 3 (E): Emitter
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Low Saturation Voltage: Ensures efficient power usage with minimal heat generation during operation.
- High Current Gain: Offers a high current gain (hFE), enhancing performance in amplification applications.
- Compact Size: SOT-23 package design allows for easy integration into compact circuit layouts.
- Fast Switching Speed: Provides quick response times, ideal for high-speed switching applications.
- Temperature Range: Operates effectively over a wide temperature range, suitable for various environments.
Application
- Signal Amplification: Ideal for low-power amplification applications in audio and signal processing circuits.
- Switching Applications: Used in electronic circuits for switching tasks, including relay control and motor drives.
- Low-Power Circuits: Suitable for battery-operated devices where power efficiency is critical.
Where to Use
The SMMBT3906LT3G is suitable for various low-power electronic applications that require efficient switching and amplification. It can be utilized in consumer electronics, signal processing circuits, and battery-operated devices for optimal performance.
How to Use
Connect the SMMBT3906LT3G by attaching the base (B) to the control signal, the collector (C) to the load, and the emitter (E) to ground. Ensure that the input voltage and current are within specified limits for optimal performance. For detailed usage instructions, refer to the datasheet.
Application Circuit
The application circuit diagram for the SMMBT3906LT3G illustrates how to connect the transistor in a typical amplification or switching setup. It includes connections for power, signal input, and load, ensuring proper operation in your device.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- 2N3906: An equivalent NPN transistor offering similar performance characteristics.
- BC556: Another alternative transistor with comparable functions for low-power applications.
Complementary
The SMMBT3906LT3G can be complemented by the SMMBT3904LT3G, which is a complementary NPN transistor suitable for matching applications in push-pull configurations.
When selecting complementary transistors, confirm that their specifications align with your circuit requirements for optimal performance and compatibility.
Frequently Asked Questions
Q: What is the maximum collector current for the SMMBT3906LT3G?
A: The SMMBT3906LT3G can handle a maximum collector current of 200 mA. For more limit details, refer to the datasheet.
Q: Can the SMMBT3906LT3G be used in high-temperature environments?
A: Yes, the SMMBT3906LT3G is designed to operate effectively over a wide range of temperatures, but be sure to check the thermal limits specified in the datasheet for reliable performance.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | SOT-23-3 | Case Outline | 318-08 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 10000 |
ON Target | N | Polarity | PNP |
Type | General Purpose | VCE(sat) Max (V) | 0.4 |
IC Cont. (A) | 0.2 | VCEO Min (V) | 40 |
VCBO (V) | 40 | VEBO (V) | 5 |
VBE(sat) (V) | 0.95 | hFE Min | 100 |
hFE Max | 300 | fT Min (MHz) | 250 |
PTM Max (W) | 0.225 | Pricing ($/Unit) | $0.0293 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SMMBT3906LT3G?
The SMMBT3906LT3G is a PNP bipolar transistor designed by ON Semiconductor. It is ideal for use in low-power switching applications, amplifier circuits, and voltage reference circuits.
How Does SMMBT3906LT3G Work?
The SMMBT3906LT3G operates as a PNP bipolar transistor, allowing current to flow from the emitter to the collector when a positive voltage is applied to the base. It can be used to switch and amplify electronic signals in various circuit designs.
How Many Pins does SMMBT3906LT3G have and What are the Functions of the Pinout Configuration?
The SMMBT3906LT3G is housed in an SOT-23 surface-mount package. The pinout configuration includes:
- Emitter (E): The terminal for the emitter of the transistor.
- Base (B): The terminal for the base of the transistor.
- Collector (C): The terminal for the collector of the transistor.
What are the Pros and Cons of SMMBT3906LT3G?
Pros:
- Small Form Factor: The SOT-23 package is compact, making it suitable for space-constrained designs.
- PNP Transistor: Can be used in complementary configurations with NPN transistors for various circuit applications.
- Low Power Applications: Suitable for low-power switching and amplification circuits.
Cons:
- Current and Power Limitations: The SMMBT3906LT3G may not be suitable for high-current or high-power applications.
- Temperature Sensitivity: Performance may be affected by temperature variations, requiring careful thermal management in certain applications.
Are There Any Equivalents/Alternatives to SMMBT3906LT3G for Recommendation?
Other similar PNP transistors include the 2N3906 from Fairchild Semiconductor and the BC327 from NXP Semiconductors.
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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