SKM100GAL123D
N-Channel Insulated Gate Bipolar Transistor with a 100A I(C)SKM100GAL123D
N-Channel Insulated Gate Bipolar Transistor with a 100A I(C)
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Manufacturer Part # : SKM100GAL123D
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Package/Case: Module
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Brand: Semikron
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Product Categories : Single IGBTs
Quality Assurance
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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SKM100GAL123D DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
SKM100GAL123D Description
The SKM100GAL123D is a high-performance power IGBT transistor from Semikron, designed for demanding applications in the field of power electronics. This device is ideal for industrial motor drives, renewable energy systems, and other applications where high current and voltage handling are required.
Pin Details
The SKM100GAL123D is a 6-pin IGBT transistor with pins for gate drive, collector-emitter voltage, emitter current, and power supply connections. The pin configuration includes:
- Pin 1 (G): Gate Drive Input
- Pin 2 (C-E): Collector-Emitter Voltage
- Pin 3 (E): Emitter Current
- Pin 4 (VCC): Positive Power Supply
- Pin 5 (GND): Ground
- Pin 6 (S): Sense Input
Features
- High Current Handling: Capable of handling high currents up to 100A, making it suitable for demanding applications.
- Low Loss Performance: Designed for low loss performance, reducing heat generation and increasing overall system efficiency.
- Wide Operating Temperature Range: Operates efficiently between -40°C and +150°C, allowing for reliable operation in various environmental conditions.
- Robust Construction: Built with a robust construction to withstand harsh operating conditions and minimize the risk of failure.
Applications
The SKM100GAL123D is commonly used in industrial motor drives, renewable energy systems, and other applications where high current and voltage handling are required.
Where to Use:
- Industrial motor drives
- Renewable energy systems (solar, wind, etc.)
- Uninterruptible power supplies (UPS)
- Electric vehicle charging stations
- Power quality improvement applications
Manufacturer
The SKM100GAL123D is manufactured by Semikron, a leading provider of high-performance power semiconductors.
Packages
The SKM100GAL123D comes in a TO-247 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of SKM100GAL123D
- Fuji Electric FGH50R12K: A comparable IGBT transistor from Fuji Electric with similar features and performance.
- Infineon IGBT BSM50R-07L: An alternative IGBT transistor from Infineon that offers equivalent functionality.
FAQ
Q: What is the maximum current handling of the SKM100GAL123D?
A: The maximum current handling is 100A, making it suitable for demanding applications.
Q: Can the SKM100GAL123D operate in high-temperature environments?
A: Yes, it operates efficiently between -40°C and +150°C, allowing for reliable operation in various environmental conditions.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Part Package Code | DO-204 |
Pin Count ! | 2 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Case Connection | ISOLATED |
Collector Current-Max (IC) | 100 A | Collector-Emitter Voltage-Max | 1200 V |
Configuration | SINGLE WITH BUILT-IN DIODE | Gate-Emitter Voltage-Max | 20 V |
JESD-30 Code | R-XUFM-X5 | JESD-609 Code | e3/e4 |
Number of Elements | 1 | Number of Terminals | 5 |
Operating Temperature-Max | 150 °C | Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 625 W | Qualification Status ! | Not Qualified |
Reference Standard | UL RECOGNIZED | Surface Mount ! | NO |
Terminal Finish | TIN/SILVER | Terminal Form ! | UNSPECIFIED |
Terminal Position | UPPER | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 520 ns | Turn-on Time-Nom (ton) | 100 ns |
VCEsat-Max | 3 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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