SKIIP37NAB12T4V1

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PIN
5,434 Effective Inventory

SKIIP37NAB12T4V1

Effective Inventory5,434

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PIN

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SKIIP37NAB12T4V1 DataSheet
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SKIIP37NAB12T4V1 Details

The SKIIP37NAB12T4V1 is a Insulated Gate Bipolar Transistor (IGBT) designed and manufactured by Semikron. It is a 96A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PIN device.

The SKIIP37NAB12T4V1 is an insulated gate bipolar transistor (IGBT) designed to provide high current and voltage capabilities. It features a high current rating of 96A and a blocking voltage of 1200V, making it suitable for demanding power electronic applications.

SKIIP37NAB12T4V1 Key Features

  • High Current Rating: 96A I(C)
  • Blocking Voltage: 1200V V(BR)CES
  • N-Channel, MINISKIIP 3, 68 PIN package

SKIIP37NAB12T4V1 Product Usage

The SKIIP37NAB12T4V1 is a versatile IGBT device suitable for various power electronic applications. Some typical uses include:

Power Electronic Applications:

  • PWM Control: The SKIIP37NAB12T4V1 can be used in PWM control circuits to regulate the output voltage and current.
  • Motor Control: It is suitable for controlling DC motors, AC induction motors, and other inductive loads.
  • Power Supplies: The device can be used in power supplies, such as DC/DC converters, AC/DC converters, and motor drives.

SKIIP37NAB12T4V1 Circuit Diagram

A sample circuit diagram using the SKIIP37NAB12T4V1 might involve:

  • Power Supply: Connect a suitable voltage supply to the Vcc pin.
  • Load Connection: Connect the load (e.g., motor, inductor) between the collector and emitter terminals of the IGBT.
  • PWM Input: Apply a PWM signal to the gate terminal to control the switching action.

Before designing a specific circuit, it is essential to refer to the manufacturer's datasheet and application notes to ensure correct implementation and to understand all the specifications, electrical characteristics, and protective features of the SKIIP37NAB12T4V1.

SKIIP37NAB12T4V1 Quality and Reliability

Semikron's commitment to quality ensures that the SKIIP37NAB12T4V1 IGBT is reliable and performs consistently. It is designed to meet the stringent requirements of industrial and commercial applications, where consistent operation and long service life are critical.

SKIIP37NAB12T4V1 Ordering Information

The SKIIP37NAB12T4V1 is available in tape and reel packaging, facilitating efficient assembly for high-volume production. Its product identification, including the temperature range and package type, is clearly specified for ease of ordering.

SKIIP37NAB12T4V1 Package and Quality

The SKIIP37NAB12T4V1 is housed in a compact, thermally efficient 68 PIN package, making it suitable for space-constrained designs without compromising on thermal management or performance. Semikron ensures that each unit undergoes rigorous testing to meet stringent industrial standards. This emphasis on quality guarantees that the SKIIP37NAB12T4V1 delivers dependable, long-term performance across a wide range of operational environments.

Conclusion

The SKIIP37NAB12T4V1 from Semikron is an ideal choice for engineers seeking a reliable IGBT device for high-power electronic applications. With its high current rating and blocking voltage, it is well-suited for demanding power electronic applications across various industries. Whether used in motor control, power supplies, or other power electronic applications, the SKIIP37NAB12T4V1 provides robust performance and flexibility, making it a valuable component for demanding power electronic applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Pin Count ! 68 Reach Compliance Code compliant
ECCN Code EAR99 Additional Feature ! HIGH RELIABILITY
Case Connection ISOLATED Collector Current-Max (IC) 96 A
Collector-Emitter Voltage-Max 1200 V Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V JESD-30 Code R-XUFM-X68
Number of Elements 7 Number of Terminals 68
Operating Temperature-Max 175 °C Package Body Material UNSPECIFIED
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Qualification Status ! Not Qualified Reference Standard UL RECOGNIZED
Surface Mount ! NO Terminal Form ! UNSPECIFIED
Terminal Position UPPER Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL Transistor Element Material SILICON
VCEsat-Max 2.1 V

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SKIIP37NAB12T4V1 PDF Download

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