SIR626LDP-T1-RE3
N-Channel 60V 186A 104W Surface Mount Power MOSFETSIR626LDP-T1-RE3
N-Channel 60V 186A 104W Surface Mount Power MOSFET
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Manufacturer Part # : SIR626LDP-T1-RE3
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Package/Case: PowerPAK-SO-8
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Brand: Vishay
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Product Categories : Single FETs, MOSFETs
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Series : SIR626
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SIR626LDP-T1-RE3 DataSheet
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Interested Parts
SIR626LDP-T1-RE3 Details
The SIR626LDP-T1-RE3 is a dual P-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in various electronic circuits. This MOSFET features low on-state resistance and fast switching characteristics, making it ideal for applications requiring low power dissipation and high reliability.
Pinout
- 1 (G): Gate
- 2 (D1): Drain 1
- 3 (S1): Source 1
- 4 (D2): Drain 2
- 5 (S2): Source 2
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Low On-State Resistance: Provides efficient power management with minimal power loss.
- Fast Switching Speed: Enables rapid switching for improved circuit performance.
- Dual MOSFET Configuration: Offers dual channels for enhanced functionality and flexibility.
- High Reliability: Designed for reliable operation in various electronic applications.
Application
- Power Management: Ideal for power management circuits in DC-DC converters and voltage regulation systems.
- Motor Control: Used in motor control applications for efficient power switching and control.
- Battery Protection: Suitable for battery protection circuits in portable electronic devices.
Where to Use
The SIR626LDP-T1-RE3 is suitable for applications that require efficient power switching and management. It is commonly used in DC-DC converters, motor control systems, and battery protection circuits for optimized performance and reliability.
How to Use
Connect the SIR626LDP-T1-RE3 to your circuit by wiring the Gate, Drain, and Source pins according to the circuit requirements. Ensure proper gate driving voltage and consider heat dissipation for optimal performance. Refer to the datasheet for detailed usage instructions.
Application Circuit
The application circuit diagram for the SIR626LDP-T1-RE3 demonstrates how to integrate the dual MOSFET into your electronic system. It includes connections for gate driving, drain, and source terminals, ensuring proper functionality and performance.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- SIR878DP-T1-RE3: A comparable dual P-channel MOSFET with similar specifications and performance characteristics.
- SIR942DP-T1-GE3: An alternative dual MOSFET featuring equivalent functionality for power management applications.
Complementary
The SIR626LDP-T1-RE3 can be paired with the SI2308DS-T1-GE3, a complementary N-channel MOSFET, to build efficient power switching circuits with enhanced performance and functionality.
When selecting complementary components, ensure compatibility and alignment with your circuit requirements for optimal synergy.
Frequently Asked Questions
Q: What is the maximum drain-source voltage rating of the SIR626LDP-T1-RE3?
A: The SIR626LDP-T1-RE3 has a maximum drain-source voltage rating specified in the datasheet. Refer to the datasheet for detailed electrical characteristics and ratings.
Q: Can the SIR626LDP-T1-RE3 be used in high-frequency switching applications?
A: Yes, the SIR626LDP-T1-RE3 is suitable for high-frequency switching due to its fast switching speed and low on-state resistance characteristics. However, consider the application's specific requirements and operating conditions for optimal performance.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 186 A |
Rds On - Drain-Source Resistance | 1.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 135 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | TrenchFET, PowerPAK | Series | SIR |
Brand | Vishay / Siliconix | Configuration | Single |
Fall Time | 10 ns | Forward Transconductance - Min | 140 S |
Product Type ! | MOSFET | Rise Time ! | 64 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 17 ns | Unit Weight | 0.017870 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SIR626LDP-T1-RE3?
The SIR626LDP-T1-RE3 is a 20 V P-Channel MOSFET designed by Vishay Siliconix. It is ideal for use in power management, battery protection, and load switching applications.
How Does SIR626LDP-T1-RE3 Work?
The SIR626LDP-T1-RE3 operates as a P-Channel MOSFET, allowing it to control the flow of current in a circuit. When a negative voltage is applied to the gate terminal, the MOSFET conducts current, enabling power management and control functions.
How Many Pins does SIR626LDP-T1-RE3 have and What are the Functions of the Pinout Configuration?
The SIR626LDP-T1-RE3 is housed in a PowerPAK SO-8 package. The pinout configuration includes:
- GATE: Gate control pin.
- SOURCE: Source terminal.
- DRAIN: Drain terminal.
- NC: No-connect pin.
- NC: No-connect pin.
- SOURCE: Source terminal.
- DRAIN: Drain terminal.
What are the Pros and Cons of SIR626LDP-T1-RE3?
Pros:
- High Voltage Rating: With a 20V rating, it is suitable for a wide range of applications.
- Low On-Resistance: Efficiently conducts current with minimal voltage drop.
- Compact Package: The PowerPAK SO-8 package offers a space-efficient design.
- P-Channel MOSFET: Can be used in applications that require a P-Channel device.
Cons:
- Not Suitable for High Current: May not be suitable for high-current applications due to its specific voltage and current ratings.
- Gate Drive Consideration: Requires careful consideration of gate drive voltage and timing for optimal performance.
Are There Any Equivalents/Alternatives to SIR626LDP-T1-RE3 for Recommendation?
- The SUP75P03 from Vishay Siliconix is a similar P-Channel MOSFET with comparable specifications.
- Alternatives to the SIR626LDP-T1-RE3 include the SI7469DP-T1-GE3 from Vishay Siliconix and the AO3400A from Alpha & Omega Semiconductor.
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Price details
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