SI7461DP-T1-E3

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The SI7461DP-T1-E3 from Vishay is a P-Channel MOSFET designed for a maximum current of 8

  • Manufacturer Part # : SI7461DP-T1-E3

  • Package/Case: PowerPAK-SO-8

  • Part Status : Active

  • Brand: Vishay

  • Product Categories : FETs, MOSFETs

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SI7461DP-T1-E3 DataSheet

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Quick Inquiry

Please submit RFQ for SI7461DP-T1-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The SI7461DP-T1-E3 is a dual N-channel MOSFET power transistor from Vishay Siliconix. This transistor features a low on-resistance of 29 mΩ at a VGS of 10V, making it suitable for high efficiency power management applications. It has a continuous drain current rating of 40A and a maximum operating temperature of 175°C, ensuring reliable operation in a variety of conditions.The SI7461DP-T1-E3 is housed in a PowerPAK 1212-8 package, which provides high power density and efficient heat dissipation. This package also offers low parasitic inductance, allowing for fast switching speeds and reduced power losses. The MOSFET is designed for use in synchronous buck converters, motor control, battery management systems, and other power electronics applications.This power transistor is RoHS-compliant and halogen-free, making it environmentally friendly and suitable for use in various industries. Its compact size and high performance characteristics make it a popular choice for designers looking to optimize power efficiency in their applications.

SI7461DP-T1-E3

Key Features

  • SI7461DP-T1-E3 is a P-channel MOSFET with a low threshold voltage of -1
  • 1V, ideal for low-voltage applications
  • It has a maximum drain-source voltage of -20V and a continuous drain current of -3
  • 1A
  • This MOSFET is designed for use in DC-DC converters, load switches, and power management applications, offering high performance in a compact package
  • Application

  • The SI7461DP-T1-E3 is a dual P-channel MOSFET specifically designed for use in battery protection circuits, power management applications, and reverse polarity protection
  • It is suitable for various consumer electronics, industrial, automotive, and portable electronic devices where efficient power management and overvoltage protection are required
  • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Package / Case PowerPAK-SO-8 Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
    Id - Continuous Drain Current 14.4 A Rds On - Drain-Source Resistance 14.5 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
    Qg - Gate Charge 121 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 5.4 W
    Channel Mode Enhancement Tradename TrenchFET
    Series SI7 Brand Vishay Semiconductors
    Configuration Single Fall Time 90 ns
    Forward Transconductance - Min 31 S Height 1.04 mm
    Length 6.15 mm Product Type MOSFET
    Rise Time 20 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 P-Channel
    Typical Turn-Off Delay Time 205 ns Typical Turn-On Delay Time 20 ns
    Width 5.15 mm Part # Aliases SI7461DP-E3
    Unit Weight 0.017870 oz

    Datasheet PDF

    Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

    Preliminary Specification SI7461DP-T1-E3 PDF Download

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