SI7461DP-T1-E3

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The SI7461DP-T1-E3 from Vishay is a P-Channel MOSFET designed for a maximum current of 8

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SI7461DP-T1-E3 DataSheet

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SI7461DP-T1-E3 Details

The SI7461DP-T1-E3 is a P-channel MOSFET from Vishay Intertech, designed for use in DC-DC converters, load switches, and power management applications. This device offers high performance in a compact package, making it suitable for various consumer electronics, industrial, automotive, and portable electronic devices.

Pinout

  • Drain (D): The drain pin is the connection point for the MOSFET's output current.
  • Source (S): The source pin is the connection point for the MOSFET's input current.
  • Gate (G): The gate pin is used to control the MOSFET's operation by applying a voltage signal.
  • VCC: The positive power supply pin provides power to the MOSFET.
  • GND: The ground pin connects the MOSFET to the system's ground reference.

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • P-Channel MOSFET: The SI7461DP-T1-E3 is a P-channel MOSFET designed for use in DC-DC converters, load switches, and power management applications.
  • Low On-State Resistance (RDS(on)): The device features low on-state resistance, making it suitable for high-frequency switching applications.
  • High Current Handling: The SI7461DP-T1-E3 can handle high currents, making it suitable for demanding power management applications.

Applications

The SI7461DP-T1-E3 is suitable for various applications that require a P-channel MOSFET with low on-state resistance and high current handling. Some examples include:

  • DC-DC converters
  • Load switches
  • Power management systems
  • Portable electronic devices

Where to Use

The SI7461DP-T1-E3 is suitable for use in various industries and applications, including:

  • Consumer electronics
  • Industrial automation
  • Automotive systems
  • Portable electronic devices

How to Use

To use the SI7461DP-T1-E3, follow these steps:

  1. Connect the drain pin (D) to the positive power supply rail.
  2. Connect the source pin (S) to the system's ground reference.
  3. Apply a voltage signal to the gate pin (G) to control the MOSFET's operation.

Application Circuit

The application circuit diagram for the SI7461DP-T1-E3 illustrates how to connect the device in a DC-DC converter application. It includes connections for power supply, ground, and control signals.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • Si7150DP-T1-E3: A similar P-channel MOSFET from Vishay Intertech offering comparable features and performance.
  • STP16NF06L: An alternative P-channel MOSFET from STMicroelectronics with equivalent functionality.

Complementary

The SI7461DP-T1-E3 can be complemented by the N-channel MOSFETs, such as the Si7150DN-T1-E3, which offers similar features and performance.

When selecting complementary devices, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

SI7461DP-T1-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 14.4 A Rds On - Drain-Source Resistance 14.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 121 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 5.4 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 90 ns
Forward Transconductance - Min 31 S Height 1.04 mm
Length 6.15 mm Product Type ! MOSFET
Rise Time ! 20 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 205 ns Typical Turn-On Delay Time 20 ns
Width 5.15 mm Part # Aliases SI7461DP-E3
Unit Weight 0.017870 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI7461DP-T1-E3 PDF Download

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