SI7439DP-T1-GE3

Name: SI7439DP-T1-GE3
Brand: Vishay
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

Power MOSFET with 150V drain-source voltage and 20V gate-source voltage

5,752 Effective Inventory

SI7439DP-T1-GE3

Effective Inventory5,752

Power MOSFET with 150V drain-source voltage and 20V gate-source voltage

Manufacturer Part # : SI7439DP-T1-GE3
Package/Case: PowerPAK-SO-8
Part Status : Active
Brand: Vishay
Product Categories : Single FETs, MOSFETs
Series : SI7439

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SI7439DP-T1-GE3 DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$1.088	$1.09
10	$1.064	$10.64
30	$1.049	$31.47
100	$1.034	$103.40

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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SI7439DP-T1-GE3 Details

The SI7439DP-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, designed for high-performance switching applications in power management circuits. This MOSFET offers low on-resistance and fast switching speed, making it suitable for efficient power control in various electronic devices. It is housed in a compact and robust package, ensuring reliability in harsh operating conditions.

Pinout

1 (G): Gate for MOSFET 1
2 (D): Drain for MOSFET 1
3 (S): Source for MOSFET 1
4 (G): Gate for MOSFET 2
5 (D): Drain for MOSFET 2
6 (S): Source for MOSFET 2

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

Low On-Resistance: Provides efficient power control with minimal voltage drop.
Fast Switching Speed: Ensures quick response in switching applications for improved performance.
Compact Package: Housed in a small package for easy integration into power management circuits.
High Temperature Stability: Designed to maintain performance across a wide temperature range.
Enhanced Power Efficiency: Offers high power efficiency for energy-conscious applications.

Application

Power Management: Ideal for power control and regulation in electronic devices.
DC-DC Converters: Used in DC-DC converter circuits for efficient power conversion.
Motor Drive: Suitable for motor drive circuits requiring high-performance switching capabilities.

Where to Use

The SI7439DP-T1-GE3 is recommended for applications where efficient power switching and control are essential. It is commonly employed in power management systems, DC-DC converters, and motor drive circuits for optimal performance.

How to Use

Integrate the SI7439DP-T1-GE3 into your power management circuit by connecting the gate, drain, and source pins of each MOSFET as per the circuit design. Ensure proper heat dissipation and consider voltage and current ratings for safe and efficient operation. Refer to the datasheet for detailed usage instructions.

Application Circuit

The application circuit diagram for the SI7439DP-T1-GE3 illustrates the connections for integrating the dual N-channel MOSFET into a power management system. It includes gate, drain, and source connections for each MOSFET to enable efficient power switching.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

SIP32408DH-T1-GE4: A similar dual N-channel MOSFET with comparable performance characteristics.
SIC654DH-T1-GE3: An alternative dual N-channel MOSFET offering similar power management capabilities.

Complementary

The SI7439DP-T1-GE3 can be complemented by the SI7106DN-T1-GE3, which provides enhanced protection features and compatibility for advanced power management systems. When pairing complementary components, ensure compatibility with your specific application requirements.

Frequently Asked Questions

Q: What is the maximum current rating of the SI7439DP-T1-GE3?

A: The SI7439DP-T1-GE3 has a maximum current rating suitable for various power switching applications. Refer to the datasheet for specific ratings and operating conditions.

Q: Can the SI7439DP-T1-GE3 be used in automotive power systems?

A: Yes, the SI7439DP-T1-GE3 is designed for high-performance power management applications, including automotive systems where efficient power control is required.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	PowerPAK-SO-8	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	5.2 A	Rds On - Drain-Source Resistance	90 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	88 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	5.4 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI7	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	64 ns
Forward Transconductance - Min	19 S	Height	1.04 mm
Length	6.15 mm	Product Type !	MOSFET
Rise Time !	46 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	115 ns	Typical Turn-On Delay Time	25 ns
Width	5.15 mm	Part # Aliases	SI7439DP-GE3
Unit Weight	0.017870 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI7439DP-T1-GE3 PDF Download

FAQs

What is SI7439DP-T1-GE3?

The SI7439DP-T1-GE3 is a dual N-channel 30V MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is commonly used in power management and switching applications such as voltage regulators, motor control, and load switches.

How Does SI7439DP-T1-GE3 Work?

The SI7439DP-T1-GE3 works by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. This allows it to act as a switch or amplifier in various electronic circuits, providing efficient power handling and control.

How Many Pins does SI7439DP-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SI7439DP-T1-GE3 is housed in a PowerPAK® SO-8 package. The pinout configuration includes:

GATE1: Gate terminal for the first MOSFET.
SOURCE1: Source terminal for the first MOSFET.
DRAIN1: Drain terminal for the first MOSFET.
GND: Ground pin.
DRAIN2: Drain terminal for the second MOSFET.
SOURCE2: Source terminal for the second MOSFET.
GATE2: Gate terminal for the second MOSFET.
VCC: Power supply pin.

What are the Pros and Cons of SI7439DP-T1-GE3?

Pros:

High Voltage Capability: The 30V rating allows for versatile use in various applications.
Low On-Resistance: Provides efficient power handling and low power dissipation.
Dual MOSFET Configuration: Offers flexibility in circuit design and current handling capabilities.
Compact Package: PowerPAK SO-8 package offers space-saving design and efficient heat dissipation.

Cons:

Drive Voltage Requirement: Requires appropriate gate drive voltage for optimal performance.
Heat Dissipation: May require thermal considerations for high-power applications.
External Components: External protection and drive circuitry may be needed for certain applications.

Are There Any Equivalents/Alternatives to SI7439DP-T1-GE3 for Recommendation?

The SI7336ADP-T1-GE3 from Vishay Siliconix is a similar dual MOSFET with a different voltage rating.
Alternatives to the SI7439DP-T1-GE3 include the IRF740 from Infineon and the FDD6637 from Fairchild Semiconductor.