SI7157DP-T1-GE3
MOSFET with -20V Vds and 12V Vgs in PowerPAK SO-8 packageSI7157DP-T1-GE3
MOSFET with -20V Vds and 12V Vgs in PowerPAK SO-8 package
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Manufacturer Part # : SI7157DP-T1-GE3
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Package/Case: PowerPAK-SO-8
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Brand: Vishay
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Product Categories : Single FETs, MOSFETs
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SI7157DP-T1-GE3 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $1.254 | $1.25 |
10 | $1.227 | $12.27 |
30 | $1.207 | $36.21 |
100 | $1.189 | $118.90 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
SI7157DP-T1-GE3 Details
The SI7157DP-T1-GE3 is an advanced N-channel power MOSFET from Vishay, designed for reliable switching in demanding industrial applications. This device features high-speed switching capability, low gate charge, and high current handling, making it suitable for a wide range of applications.
Pinout
- DRAIN (Drain): Drain pin
- GATE (Gate): Gate pin
- SOURCE (Source): Source pin
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Advanced Power MOSFET Technology: The SI7157DP-T1-GE3 features advanced power MOSFET technology for reliable switching in demanding industrial applications.
- High-Speed Switching Capability: This device offers high-speed switching capability, making it suitable for a wide range of applications.
- Low Gate Charge: The SI7157DP-T1-GE3 has low gate charge for improved efficiency and reduced power consumption.
- High Current Handling: This device can handle high current levels, making it suitable for demanding industrial applications.
Applications
- Industrial Automation: Suitable for industrial automation systems requiring reliable switching and high-speed communication.
- Automotive Systems: Can be used in automotive systems where high current handling and efficient switching are critical.
- Railway Systems: The SI7157DP-T1-GE3 can also be used in railway systems for reliable switching and improved efficiency.
Where to Use
The SI7157DP-T1-GE3 is suitable for applications that require high-speed switching, low gate charge, and high current handling. It's ideal for systems where efficient power conversion and reliable communication are critical.
How to Use
Connect the SI7157DP-T1-GE3 to your desired power supply source. Choose a suitable PCB layout for optimal performance and reliability. Ensure proper mounting and thermal management for extended lifespan.
Application Circuit
The application circuit diagram for the SI7157DP-T1-GE3 provides an insight into how this MOSFET can be used in a typical switching application. It shows the pin connections, component values, and recommended PCB layout for optimal performance.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- NF2SD61L: A similar N-channel power MOSFET from Fairchild Semiconductor offering comparable features and performance.
- STP16NF50L: An alternative N-channel power MOSFET from STMicroelectronics with equivalent functionality.
Complementary
The SI7157DP-T1-GE3 can be complemented by the SI7158DP-T1-GE3, which offers additional features such as higher current handling and improved thermal management, suitable for more demanding applications.
When selecting complementary MOSFETs, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 60 A | Rds On - Drain-Source Resistance | 2 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.4 V |
Qg - Gate Charge | 415 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 104 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 75 ns |
Forward Transconductance - Min | 120 S | Product Type ! | MOSFET |
Rise Time ! | 120 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 230 ns | Typical Turn-On Delay Time | 115 ns |
Unit Weight | 0.017870 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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