SI7157DP-T1-GE3

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MOSFET with -20V Vds and 12V Vgs in PowerPAK SO-8 package

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SI7157DP-T1-GE3 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $1.254 $1.25
10 $1.227 $12.27
30 $1.207 $36.21
100 $1.189 $118.90

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Interested Parts

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Please submit RFQ for SI7157DP-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

SI7157DP-T1-GE3 Details

The SI7157DP-T1-GE3 is an advanced N-channel power MOSFET from Vishay, designed for reliable switching in demanding industrial applications. This device features high-speed switching capability, low gate charge, and high current handling, making it suitable for a wide range of applications.

Pinout

  • DRAIN (Drain): Drain pin
  • GATE (Gate): Gate pin
  • SOURCE (Source): Source pin

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Advanced Power MOSFET Technology: The SI7157DP-T1-GE3 features advanced power MOSFET technology for reliable switching in demanding industrial applications.
  • High-Speed Switching Capability: This device offers high-speed switching capability, making it suitable for a wide range of applications.
  • Low Gate Charge: The SI7157DP-T1-GE3 has low gate charge for improved efficiency and reduced power consumption.
  • High Current Handling: This device can handle high current levels, making it suitable for demanding industrial applications.

Applications

  • Industrial Automation: Suitable for industrial automation systems requiring reliable switching and high-speed communication.
  • Automotive Systems: Can be used in automotive systems where high current handling and efficient switching are critical.
  • Railway Systems: The SI7157DP-T1-GE3 can also be used in railway systems for reliable switching and improved efficiency.

Where to Use

The SI7157DP-T1-GE3 is suitable for applications that require high-speed switching, low gate charge, and high current handling. It's ideal for systems where efficient power conversion and reliable communication are critical.

How to Use

Connect the SI7157DP-T1-GE3 to your desired power supply source. Choose a suitable PCB layout for optimal performance and reliability. Ensure proper mounting and thermal management for extended lifespan.

Application Circuit

The application circuit diagram for the SI7157DP-T1-GE3 provides an insight into how this MOSFET can be used in a typical switching application. It shows the pin connections, component values, and recommended PCB layout for optimal performance.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • NF2SD61L: A similar N-channel power MOSFET from Fairchild Semiconductor offering comparable features and performance.
  • STP16NF50L: An alternative N-channel power MOSFET from STMicroelectronics with equivalent functionality.

Complementary

The SI7157DP-T1-GE3 can be complemented by the SI7158DP-T1-GE3, which offers additional features such as higher current handling and improved thermal management, suitable for more demanding applications.

When selecting complementary MOSFETs, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

SI7157DP-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 60 A Rds On - Drain-Source Resistance 2 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.4 V
Qg - Gate Charge 415 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 104 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 75 ns
Forward Transconductance - Min 120 S Product Type ! MOSFET
Rise Time ! 120 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 230 ns Typical Turn-On Delay Time 115 ns
Unit Weight 0.017870 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI7157DP-T1-GE3 PDF Download

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