SI2337DS-T1-GE3

Effective Inventory5,185

P-Channel 80 V (D-S) MOSFET

  • Manufacturer Part # : SI2337DS-T1-GE3

  • Package/Case: SOT

  • Part Status : Active

  • Brand: VISHAY

  • Product Categories : FETs, MOSFETs

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Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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SI2337DS-T1-GE3 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.603 $0.60
10 $0.499 $4.99
30 $0.446 $13.38
100 $0.395 $39.50
500 $0.331 $165.50
1000 $0.315 $315.00

These prices are subiect to market fluctuations and quote submission is required.

Quick Inquiry

Please submit RFQ for SI2337DS-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The SI2337DS-T1-GE3 VISHAY Discrete Semiconductor Products FETs - Single is a single-channel FET with a drain-source voltage of 80V. It is packaged in a SOT-23-3 (TO-236) surface mount package and is made of silicon technology. It has a maximum drain current of 1.2A and a maximum power of 2.5W. It has an operating temperature range of -50°C to 150°C (TJ) and a maximum Rds-On-Max-Id-Vgs of 270 mOhm @ 1.2A, 10V.Features:- Drain-Source Voltage of 80V- SOT-23-3 (TO-236) surface mount package- Silicon technology- Operating temperature range of -50°C to 150°C (TJ)- Maximum drain current of 1.2A- Maximum power of 2.5W- Maximum Rds-On-Max-Id-Vgs of 270 mOhm @ 1.2A, 10VApplications: The SI2337DS-T1-GE3 VISHAY Discrete Semiconductor Products FETs - Single is suitable for use in a variety of applications, including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics.

SI2337DS-T1-GE3

Key Features

  • TrenchFET® power MOSFET

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer VISHAY Product Category FETs - Single
Series TrenchFET® Packaging Alternate Packaging
Part-Aliases SMD/SMT Unit-Weight -50°C ~ 150°C (TJ)
Mounting-Style SOT-23-3 (TO-236) Package-Case Single
Technology MOSFET P-Channel, Metal Oxide Operating-Temperature 80V
Mounting-Type 2.2A (Tc) Number-of-Channels 270 mOhm @ 1.2A, 10V
Supplier-Device-Package 4V @ 250μA Configuration 17nC @ 10V
FET-Type 760 mW Power-Max 15 ns 12 ns
Transistor-Type 1.2 A VDSS – Drain-Source Voltage - 80 V
Input Capacitance 20 ns

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI2337DS-T1-GE3 PDF Download

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