SI2333DS-T1-E3

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This MOSFET has a power dissipation of 1.25W and an on-state resistance of 32 milliohms at 4.5V

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SI2333DS-T1-E3 DataSheet

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SI2333DS-T1-E3 Details

The SI2333DS-T1-E3 is a P-Channel 12 V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) from Vishay Siliconix, designed for reliable power management in various applications. This device features high current handling, low thermal resistance, and a compact package, making it suitable for industrial control systems, automotive electronics, and other demanding environments.

Pinout

  • 1 (Source): Source Pin
  • 2 (Drain): Drain Pin
  • 3 (Gate): Gate Pin
  • 4 (GND): Ground Pin

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High Current Handling: Handles high currents up to 4.1A (Ta) for reliable power management.
  • Low Thermal Resistance: Offers low thermal resistance for efficient heat dissipation and reduced temperature rise.
  • Compact Package: Housed in a compact SOT-23-3 (TO-236) package, making it suitable for space-constrained designs.

Applications

  • Industrial Control Systems: Suitable for industrial control systems requiring high current handling and low thermal resistance.
  • Automotive Electronics: Ideal for automotive electronics applications where reliability, compactness, and high current handling are critical.
  • Power Supplies: Used in power supplies and DC-DC converters for efficient energy conversion and distribution.

Where to Use

The SI2333DS-T1-E3 is suitable for use in various applications where high current handling, low thermal resistance, and compact packaging are required. Some examples include:

  • Aerospace and Defense Systems
  • Automotive Electronics
  • Industrial Control Systems
  • Medical Devices

How to Use

To use the SI2333DS-T1-E3, follow these guidelines:

  1. Ensure proper PCB layout and thermal management for optimal performance.
  2. Follow recommended operating conditions and specifications for reliable operation.
  3. Use appropriate soldering techniques to ensure secure bonding of the device.

Equivalents

  • STP16NF06L: A similar P-Channel MOSFET from STMicroelectronics offering comparable features and performance.
  • FQP50N60C: An alternative P-Channel MOSFET from Fairchild Semiconductor with equivalent functionality.

Complementary

The SI2333DS-T1-E3 can be complemented by the N-Channel MOSFETs, such as the VN01N60A or the IRF510, for a complete power management solution.

When selecting complementary devices, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

SI2333DS-T1-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 32 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 11.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 60 ns
Height 1.45 mm Length 2.9 mm
Product Type ! MOSFET Rise Time ! 45 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 25 ns Width 1.6 mm
Part # Aliases SI2333DS-T1-BE3 SI2333DS-T1 Unit Weight 0.000282 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI2333DS-T1-E3 PDF Download

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