SI2333DS-T1-E3

Effective Inventory3,038

This MOSFET has a power dissipation of 1.25W and an on-state resistance of 32 milliohms at 4.5V

  • Manufacturer Part # : SI2333DS-T1-E3

  • Package/Case: SOT-23-3

  • Part Status : Active

  • Brand: Vishay

  • Product Categories : FETs, MOSFETs

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Service & Packaging

Service & Packaging

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Initiate the application within 90 days from the shipment date.

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SI2333DS-T1-E3 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Quick Inquiry

Please submit RFQ for SI2333DS-T1-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

VISHAY FETs are used in a variety of applications, including power management, motor control, and signal conditioning. They are used in power supplies, DC-DC converters, and other power management applications. They are also used in motor control applications, such as brushless DC motors, stepper motors, and servo motors. In signal conditioning applications, they are used to amplify and condition signals, such as audio signals, video signals, and data signals. They are also used in automotive applications, such as engine control, transmission control, and body control.

SI2333DS-T1-E3

Key Features

  • Halogen-free According to IEC 61249-2-21 Available
  • TrenchFET® Power MOSFET

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 32 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 11.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 60 ns
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 45 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 25 ns Width 1.6 mm
Part # Aliases SI2333DS-T1-BE3 SI2333DS-T1

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI2333DS-T1-E3 PDF Download

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