SI2323DS-T1-GE3

Name: SI2323DS-T1-GE3
Brand: Vishay
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

Details: SI2323DS-T1-GE3 MOSFETs with 20V voltage rating in SOT-23 package

4,555 Effective Inventory

SI2323DS-T1-GE3

Effective Inventory4,555

Details: SI2323DS-T1-GE3 MOSFETs with 20V voltage rating in SOT-23 package

Manufacturer Part # : SI2323DS-T1-GE3
Package/Case: SOT23-3
Brand: Vishay
Product Categories : Single FETs, MOSFETs
Series : SI2323

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SI2323DS-T1-GE3 DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$0.445	$0.44
10	$0.363	$3.63
30	$0.322	$9.66
100	$0.281	$28.10
500	$0.256	$128.00
1000	$0.243	$243.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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SI2323DS-T1-GE3 Details

The SI2323DS-T1-GE3 is a small signal MOSFET from Vishay Siliconix, designed for low-power applications where efficient switching is required. This MOSFET features a compact SOT-23 package, making it suitable for space-constrained designs that demand high performance. With low threshold voltage and high-speed switching characteristics, the SI2323DS-T1-GE3 is ideal for battery-powered devices, voltage regulators, and power management circuits.

Pinout

1 (G): Gate
2 (D): Drain
3 (S): Source

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

Low Threshold Voltage: Enables efficient switching with low control voltage.
High-Speed Switching: Provides fast switching characteristics for improved performance.
Compact Package: Housed in a space-saving SOT-23 package for compact designs.
Low Power Applications: Suitable for low-power circuits and battery-operated devices.
High Performance: Offers reliable performance in power management and voltage regulation applications.

Application

Battery-Powered Devices: Ideal for low-power devices requiring efficient switching.
Voltage Regulators: Used in voltage regulation circuits for stable power supply.
Power Management: Suitable for power management applications in various electronic systems.

Where to Use

The SI2323DS-T1-GE3 is recommended for applications that demand efficient switching and low-power consumption. It is commonly utilized in battery-powered devices, voltage regulation circuits, and power management systems to ensure reliable performance and energy efficiency.

How to Use

Integrate the SI2323DS-T1-GE3 into your circuit by connecting the Gate, Drain, and Source pins accordingly. Ensure proper voltage levels and consider the switching speed requirements for your specific application. Refer to the datasheet for detailed usage guidelines and performance specifications.

Application Circuit

The application circuit diagram for the SI2323DS-T1-GE3 illustrates how to connect the MOSFET in your electronic design. It includes connections for gate control, power supply, and load, ensuring efficient and reliable switching operation.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

BS170: A comparable small signal MOSFET offering similar performance characteristics.
2N7002: An alternative MOSFET with equivalent specifications for low-power applications.

Complementary

The SI2323DS-T1-GE3 can be complemented by the SI2301DS-T1-GE3, which provides a similar performance profile and compatibility for enhanced circuit design flexibility.

When selecting complementary components, ensure compatibility and performance alignment for seamless integration and optimal functionality.

Frequently Asked Questions

Q: What is the maximum voltage rating of the SI2323DS-T1-GE3?

A: The SI2323DS-T1-GE3 has a maximum voltage rating as specified in the datasheet. Be sure to operate within the recommended voltage limits for reliable performance.

Q: Can the SI2323DS-T1-GE3 be used in audio amplifier circuits?

A: While primarily designed for low-power applications, the SI2323DS-T1-GE3 can be utilized in audio amplifier circuits with appropriate voltage and current considerations.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SOT-23-3	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	4.7 A	Rds On - Drain-Source Resistance	39 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	12.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	1.25 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	48 ns
Height	1.45 mm	Length	2.9 mm
Product Type !	MOSFET	Rise Time !	43 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	71 ns
Typical Turn-On Delay Time	25 ns	Width	1.6 mm
Part # Aliases	SI2323DS-T1-BE3 SI2323DS-GE3	Unit Weight	0.000282 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI2323DS-T1-GE3 PDF Download

FAQs

What is SI2323DS-T1-GE3?

The SI2323DS-T1-GE3 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay Siliconix. It is commonly used for power management, battery protection, and load switching applications in various electronic devices.

How Does SI2323DS-T1-GE3 Work?

The SI2323DS-T1-GE3 works as a voltage-controlled switch or amplifier. When a positive voltage is applied to the gate terminal with respect to the source, it allows current to flow from the drain to the source, effectively turning the MOSFET 'on.' This enables the device to control the flow of current in a circuit, making it suitable for power management and switching applications.

How Many Pins does SI2323DS-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SI2323DS-T1-GE3 is housed in a SOT-23 package with three pins:

G (Gate): Controls the flow of current through the MOSFET.
D (Drain): Connects to the load or the power supply, depending on the application.
S (Source): Connects to ground or the circuit common.

What are the Pros and Cons of SI2323DS-T1-GE3?

Pros:

Low On-Resistance: Provides efficient current conduction with minimal voltage drop.
Small Package: The SOT-23 package is compact and suitable for space-constrained designs.
High Switching Speed: Enables fast response and efficient power management.
Low Gate Threshold Voltage: Easily driven by low-voltage control signals.

Cons:

Static Sensitivity: MOSFETs are susceptible to damage from electrostatic discharge (ESD) without proper handling.
Temperature Sensitivity: Performance characteristics can be affected by temperature variations.

Are There Any Equivalents/Alternatives to SI2323DS-T1-GE3 for Recommendation?

Alternatives to the SI2323DS-T1-GE3 include the AO3400A from Alpha & Omega Semiconductor and the BSS138 from ON Semiconductor.
Equivalents to the SI2323DS-T1-GE3 include the DMG2305UX from Diodes Incorporated and the NDP6020P from ON Semiconductor.