RN1106F

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TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal

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Service & Packaging

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RN1106F DataSheet

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RN1106F Description

The RN1106F is a Toshiba America Electronic Components' discrete semiconductor component, designed for general-purpose small signal applications. This device is ideal for use in various electronic circuits where high-frequency performance and low noise are required.

Pin Details

The RN1106F is a NPN transistor with 2-2HA1A package type, featuring three pins: Base (B), Collector (C), and Emitter (E). The pin configuration allows for easy integration into electronic circuits.

Pin configuration

  • B: Base Pin
  • C: Collector Pin
  • E: Emitter Pin

Features

  • High-Frequency Performance: Designed for high-frequency applications, ensuring reliable performance in various electronic circuits.
  • Low Noise: Minimizes noise interference, making it suitable for use in sensitive electronic systems.
  • General-Purpose Use: Ideal for general-purpose small signal applications where high-frequency performance and low noise are required.

Applications

The RN1106F is commonly used in various electronic circuits, including amplifiers, filters, and oscillators, where high-frequency performance and low noise are essential.

Where to Use:

  • Amplifier circuits
  • Filter circuits
  • Oscillator circuits
  • Sensitive electronic systems

Manufacturer

The RN1106F is manufactured by Toshiba America Electronic Components, a leading semiconductor manufacturer.

Packages

The RN1106F comes in an 2-2HA1A package type, making it suitable for surface-mount technology and easy integration into electronic circuits.

Equivalent Parts of RN1106F

  • TIP31C: A comparable NPN transistor from STMicroelectronics with similar features and performance.
  • 2N3904: An alternative NPN transistor from Fairchild Semiconductor that offers equivalent functionality.

FAQ

Q: What is the operating frequency range of the RN1106F?
A: It operates within a frequency range of DC to 100 MHz, making it suitable for various electronic circuits.

Q: Can the RN1106F be used in sensitive electronic systems?
A: Yes, it is designed with low noise characteristics, making it suitable for use in sensitive electronic systems where high-frequency performance and low noise are required.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Pin Count ! 3 ECCN Code EAR99
Additional Feature ! BUILT-IN BIAS RESISTOR RATIO IS 10 Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 JESD-30 Code R-PDSO-F3
Number of Elements 1 Number of Terminals 3
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.1 W
Qualification Status ! Not Qualified Surface Mount ! YES
Terminal Form ! FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 250 MHz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification RN1106F PDF Download

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