RJK0330DPB-00-J0
45A, 30V, 0.0039ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SC-100, LFPAK-5RJK0330DPB-00-J0
45A, 30V, 0.0039ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SC-100, LFPAK-5
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Manufacturer Part # : RJK0330DPB-00-J0
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Package/Case: LFPAK
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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RJK0330DPB-00-J0 DataSheet

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Interested Parts
RJK0330DPB-00-J0 Description
The RJK0330DPB-00-J0 is a high-performance power MOSFET from Renesas Electronics Corporation, designed for reliable and efficient power management in various applications. This device features a low on-resistance of 0.0039ohm, making it ideal for use in DC-DC converters, motor drives, and other power conversion systems.
Pin Details
The RJK0330DPB-00-J0 is an N-channel power MOSFET with a single pin configuration. It includes pins for the drain (D), source (S), gate (G), and substrate (SUB) connections, as well as a pin for the positive power supply (VCC).
Pin configuration
- D: Drain
- S: Source
- G: Gate
- SUB: Substrate
- VCC: Positive Power Supply
Features
- Low On-Resistance: Offers a low on-resistance of 0.0039ohm, reducing power loss and increasing efficiency.
- High Current Handling: Designed to handle high currents up to 45A, making it suitable for demanding power conversion applications.
- Wide Operating Temperature Range: Operates efficiently between -40°C and +125°C, allowing for reliable performance in various environmental conditions.
Applications
The RJK0330DPB-00-J0 is commonly used in power conversion systems such as DC-DC converters, motor drives, and other applications where high current handling and low on-resistance are required.
Where to Use:
- Power supplies
- Motor drives
- DC-DC converters
- Aerospace and defense systems
- Automotive applications
Manufacturer
The RJK0330DPB-00-J0 is manufactured by Renesas Electronics Corporation, a leading global provider of semiconductor solutions.
Packages
The RJK0330DPB-00-J0 comes in an SC-100 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the power MOSFET into electronic circuits.
Equivalent Parts of RJK0330DPB-00-J0
- FDC6635: A comparable power MOSFET from Fairchild Semiconductor with similar features and performance.
- IRF540N: An alternative power MOSFET from International Rectifier that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Part Package Code | SC-100 |
Pin Count ! | 5 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (Abs) (ID) | 45 A | Drain Current-Max (ID) | 45 A |
Drain-source On Resistance-Max | 0.0039 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSSO-G4 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 55 W |
Pulsed Drain Current-Max (IDM) | 180 A | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Form ! | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 20 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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