RD35HUF2

N-Channel, Metal-oxide Semiconductor FET
5,232 Effective Inventory

RD35HUF2

Effective Inventory5,232

N-Channel, Metal-oxide Semiconductor FET

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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RD35HUF2 DataSheet
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RD35HUF2 Description

The RD35HUF2 is a high-performance power field-effect transistor from Mitsubishi Electric, designed for ultra-high frequency band applications. This device is ideal for industrial communication systems, featuring high reliability and low power consumption. It is housed in an 8-pin package, making it suitable for compact circuit designs.

Pin Details

The RD35HUF2 is a N-channel metal-oxide semiconductor FET with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (RO): Receiver Output
  • Pin 2 (RE): Receiver Output Enable
  • Pin 3 (DE): Driver Output Enable
  • Pin 4 (DI): Driver Input
  • Pin 5 (GND): Ground
  • Pin 6 (A): Non-inverting Receiver Input/Driver Output
  • Pin 7 (B): Inverting Receiver Input/Driver Output
  • Pin 8 (VCC): Positive Power Supply

Features

  • High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
  • Wide Temperature Range: Operates efficiently between -40°C and +125°C.
  • Fast Data Rates: Supports speeds up to 50Mbps for high-performance communication.
  • Reliable Communication: Ensures stable data transmission in noisy environments with its robust RS-485 transceiver.

Applications

The RD35HUF2 is commonly used in industrial communication systems that require reliable data transmission over ultra-high frequency band applications, especially in harsh environments with high noise or temperature variations.

Where to Use:

  • Industrial communication networks
  • Battery-powered devices
  • EMI-sensitive applications

Manufacturer

The RD35HUF2 is manufactured by Mitsubishi Electric, a leading provider of semiconductor components and solutions.

Packages

The RD35HUF2 is available in an 8-pin package, making it suitable for surface-mount technology and compact circuit designs.

Equivalent Parts of RD35HUF2

  • SN65HVD75: A comparable RS-485 transceiver from Texas Instruments with similar features and performance.
  • ADM4851: An alternative RS-485 transceiver from Analog Devices that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Active Pin Count ! 8
ECCN Code EAR99 Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 10 A FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code R-CDFM-F8
Number of Elements 2 Number of Terminals 8
Operating Mode ! ENHANCEMENT MODE Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Surface Mount ! YES
Terminal Form ! FLAT Terminal Position DUAL
Transistor Application AMPLIFIER Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification RD35HUF2 PDF Download

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