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RD30HUF1
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RD30HUF1
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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Manufacturer Part # : RD30HUF1
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Package/Case: CERAMIC
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Brand: Mitsubishi Electric
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Product Categories : RF FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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RD30HUF1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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RD30HUF1 Description
The RD30HUF1 is a high-performance power field-effect transistor from Mitsubishi Electric, designed for ultra-high frequency band applications. This device is ideal for industrial communication systems, featuring high reliability and low power consumption.
Pin Details
The RD30HUF1 is a 1-element power FET with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (GND): Ground
- Pin 2 (VCC): Positive Power Supply
- Pin 3 (A): Non-inverting Receiver Input/Driver Output
- Pin 4 (B): Inverting Receiver Input/Driver Output
- Pin 5 (RO): Receiver Output
- Pin 6 (RE): Receiver Output Enable
- Pin 7 (DE): Driver Output Enable
- Pin 8 (DI): Driver Input
Features
- High Performance: Designed for ultra-high frequency band applications, ensuring reliable data transmission.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices or energy-efficient systems.
- Robust Design: Features high ESD protection and a wide operating temperature range, making it suitable for harsh environments.
Applications
The RD30HUF1 is commonly used in industrial communication systems that require reliable data transmission over ultra-high frequency bands, such as wireless sensor networks or IoT applications.
Where to Use:
- Industrial automation systems
- Wireless sensor networks
- IoT applications
- Battery-powered devices
- Energy-efficient systems
Manufacturer
The RD30HUF1 is manufactured by Mitsubishi Electric, a global leader in semiconductor technology. It falls under the category of power field-effect transistors, which are designed to facilitate reliable and efficient power transmission.
Packages
The RD30HUF1 comes in an SOIC package, providing a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of RD30HUF1
- STP16NF06: A comparable power FET from STMicroelectronics with similar features and performance.
- FDC6630: An alternative power FET from Fairchild Semiconductor that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | ECCN Code | EAR99 |
| Case Connection | SOURCE | Configuration | SINGLE |
| DS Breakdown Voltage-Min | 30 V | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | JESD-30 Code | R-CDFM-F2 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Form ! | FLAT | Terminal Position | DUAL |
| Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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