RD07MVS1B

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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

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RD07MVS1B DataSheet

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RD07MVS1B Description

The RD07MVS1B is a high-performance RF power field-effect transistor from Mitsubishi Electric, designed for ultra-high frequency band applications. This device features a silicon N-channel metal-oxide semiconductor FET with a ROHS compliant package, making it suitable for compact circuit designs.

Pin Details

The RD07MVS1B is a high-frequency RF power transistor with 10 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (GND): Ground
  • Pin 2 (VCC): Positive Power Supply
  • Pin 3 (A): Non-inverting Receiver Input/Driver Output
  • Pin 4 (B): Inverting Receiver Input/Driver Output
  • Pin 5 (RE): Receiver Enable
  • Pin 6 (DE): Driver Enable
  • Pin 7 (RO): Receiver Output
  • Pin 8 (DI): Driver Input
  • Pin 9 (GND): Ground
  • Pin 10 (VCC): Positive Power Supply

Features

  • High Frequency Performance: Designed for ultra-high frequency band applications, ensuring reliable data transmission.
  • Low Noise Figure: Minimizes noise interference, allowing for clear signal reception.
  • Wide Operating Temperature Range: Operates efficiently between -40°C and +125°C, making it suitable for various environmental conditions.
  • High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.

Applications

The RD07MVS1B is commonly used in systems that require high-frequency data transmission, such as wireless communication networks and satellite communications.

Where to Use:

  • Wireless communication networks
  • Satellite communications
  • Radar and microwave applications
  • High-frequency amplifiers and transmitters

Manufacturer

Mitsubishi Electric is a leading manufacturer of semiconductor components, including RF power field-effect transistors like the RD07MVS1B.

Packages

The RD07MVS1B is available in a ROHS compliant package, making it suitable for compact circuit designs and surface-mount technology applications.

Equivalent Parts of RD07MVS1B

  • RD07MVS2: A comparable RF power field-effect transistor from Mitsubishi Electric with similar features and performance.
  • RFH2210: An alternative RF power transistor from Rohm Semiconductor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Pin Count ! 10
ECCN Code EAR99 Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 3 A Drain Current-Max (ID) 3 A
FET Technology METAL-OXIDE SEMICONDUCTOR Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-XQCC-N3 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 125 °C Package Body Material UNSPECIFIED
Package Shape RECTANGULAR Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W Qualification Status ! Not Qualified
Surface Mount ! YES Terminal Form ! NO LEAD
Terminal Position QUAD Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification RD07MVS1B PDF Download

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