RD07MVS1B
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10RD07MVS1B
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
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Manufacturer Part # : RD07MVS1B
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Package/Case: QFM-3
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Brand: Mitsubishi Electric
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Product Categories : RF FETs, MOSFETs
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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RD07MVS1B DataSheet

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Interested Parts
RD07MVS1B Description
The RD07MVS1B is a high-performance RF power field-effect transistor from Mitsubishi Electric, designed for ultra-high frequency band applications. This device features a silicon N-channel metal-oxide semiconductor FET with a ROHS compliant package, making it suitable for compact circuit designs.
Pin Details
The RD07MVS1B is a high-frequency RF power transistor with 10 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (GND): Ground
- Pin 2 (VCC): Positive Power Supply
- Pin 3 (A): Non-inverting Receiver Input/Driver Output
- Pin 4 (B): Inverting Receiver Input/Driver Output
- Pin 5 (RE): Receiver Enable
- Pin 6 (DE): Driver Enable
- Pin 7 (RO): Receiver Output
- Pin 8 (DI): Driver Input
- Pin 9 (GND): Ground
- Pin 10 (VCC): Positive Power Supply
Features
- High Frequency Performance: Designed for ultra-high frequency band applications, ensuring reliable data transmission.
- Low Noise Figure: Minimizes noise interference, allowing for clear signal reception.
- Wide Operating Temperature Range: Operates efficiently between -40°C and +125°C, making it suitable for various environmental conditions.
- High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.
Applications
The RD07MVS1B is commonly used in systems that require high-frequency data transmission, such as wireless communication networks and satellite communications.
Where to Use:
- Wireless communication networks
- Satellite communications
- Radar and microwave applications
- High-frequency amplifiers and transmitters
Manufacturer
Mitsubishi Electric is a leading manufacturer of semiconductor components, including RF power field-effect transistors like the RD07MVS1B.
Packages
The RD07MVS1B is available in a ROHS compliant package, making it suitable for compact circuit designs and surface-mount technology applications.
Equivalent Parts of RD07MVS1B
- RD07MVS2: A comparable RF power field-effect transistor from Mitsubishi Electric with similar features and performance.
- RFH2210: An alternative RF power transistor from Rohm Semiconductor that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Pin Count ! | 10 |
ECCN Code | EAR99 | Case Connection | SOURCE |
Configuration | SINGLE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (Abs) (ID) | 3 A | Drain Current-Max (ID) | 3 A |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code | R-XQCC-N3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 125 °C | Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR | Package Style | CHIP CARRIER |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 50 W | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Form ! | NO LEAD |
Terminal Position | QUAD | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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