RD01MUS1-T113

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
7,454 Effective Inventory

RD01MUS1-T113

Effective Inventory7,454

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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RD01MUS1-T113 DataSheet
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RD01MUS1-T113 Description

The RD01MUS1-T113 is a high-performance power field-effect transistor, N-channel, metal-oxide semiconductor FET from Mitsubishi Electric, designed for reliable and efficient power control in various industrial applications.

Pin Details

The RD01MUS1-T113 has 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (GND): Ground
  • Pin 2 (VCC): Positive Power Supply
  • Pin 3 (A): Non-inverting Receiver Input/Driver Output
  • Pin 4 (B): Inverting Receiver Input/Driver Output
  • Pin 5 (RE): Receiver Enable
  • Pin 6 (DE): Driver Enable
  • Pin 7 (RO): Receiver Output
  • Pin 8 (DI): Driver Input

Features

  • High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
  • Wide Temperature Range: Operates efficiently between -40°C and +125°C.
  • Fast Data Rates: Supports speeds up to 50Mbps for high-performance communication.
  • Reliable Communication: Ensures stable data transmission in noisy environments with its robust RS-485 transceiver.

Applications

The RD01MUS1-T113 is commonly used in systems that require reliable power control and efficient communication, especially in harsh environments with high noise or temperature variations.

Where to Use:

  • Industrial automation systems
  • Automotive communication networks
  • Building automation systems
  • Battery-powered devices
  • EMI-sensitive applications

Manufacturer

The RD01MUS1-T113 is manufactured by Mitsubishi Electric, a global leader in semiconductor technology. It falls under the category of power field-effect transistors, designed for reliable and efficient power control.

Packages

The RD01MUS1-T113 is available in a standard package size of 8-pin DIP (Dual In-Line Package).

Equivalent Parts of RD01MUS1-T113

  • RD01MUS1: A comparable power field-effect transistor from Mitsubishi Electric with similar features and performance.
  • STP16WPC5: An alternative power field-effect transistor from STMicroelectronics that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
ECCN Code EAR99 Configuration Single
Drain Current-Max (Abs) (ID) 0.6 A FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 3.6 W
Surface Mount ! YES

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification RD01MUS1-T113 PDF Download

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