R1LV0416DSB-5SI#B0

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Packaged in 44-Pin TSOP-II format, comes in tray packaging

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R1LV0416DSB-5SI#B0 DataSheet

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R1LV0416DSB-5SI#B0 Details

The R1LV0416DSB-5SI#B0 is a low-power CMOS SRAM chip from Renesas Electronics, offering fast and reliable data storage for various electronic devices. This chip features a storage capacity of 4Mbits and operates at a speed of 5ns, making it suitable for applications requiring high-speed access to stored data.

Pinout

  • 1 (WE): Write Enable
  • 2 (OE): Output Enable
  • 3 (A0-A18): Address Inputs
  • 4 (DQ0-DQ15): Data Inputs/Outputs
  • 5 (VCC): Positive Power Supply
  • 6 (CE1, CE2): Chip Enable Inputs
  • 7 (RY/BY): Ready/Busy Output
  • 8 (GND): Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low Power Consumption: Designed for low power operation, extending battery life in portable devices.
  • High Speed: Offers fast access times of 5ns for efficient data retrieval.
  • Large Storage Capacity: Provides 4Mbits of storage for data-intensive applications.
  • CMOS Technology: Utilizes CMOS technology for reliable and stable performance.
  • Versatile Applications: Suitable for a wide range of electronic devices requiring data storage capabilities.

Application

  • Embedded Systems: Ideal for storing program code and data in embedded systems.
  • Communication Equipment: Used in communication devices for temporary data storage.
  • Consumer Electronics: Suitable for consumer electronic products requiring fast data access.

How to Use

Integrate the R1LV0416DSB-5SI#B0 into your system by connecting the address inputs, data input/outputs, and control signals according to the datasheet specifications. Ensure proper power supply connections to VCC and GND. Utilize the chip enable and other control inputs for data access and manipulation. Refer to the datasheet for detailed usage instructions.

Application Circuit

The application circuit diagram for the R1LV0416DSB-5SI#B0 illustrates how to connect the SRAM chip to a microcontroller or processor. It includes connections for address lines, data lines, control signals, and power supplies, ensuring proper operation and data integrity.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IS61LV25616AL: A similar CMOS SRAM chip with compatible features and performance specifications.
  • AS6C4008-55SIN: An alternative low-power SRAM chip suitable for similar applications.

Complementary

The R1LV0416DSB-5SI#B0 can be complemented by the R1LV0416DSB-7SI#B0, offering higher speed operation and extended temperature range for more demanding applications.

When selecting complementary SRAM chips, ensure compatibility with existing systems and consider specific performance requirements.

Frequently Asked Questions

Q: What is the storage capacity of the R1LV0416DSB-5SI#B0?

A: The R1LV0416DSB-5SI#B0 has a storage capacity of 4Mbits. For more details, refer to the datasheet for specific specifications and organization.

Q: Can the R1LV0416DSB-5SI#B0 be used in battery-powered devices?

A: Yes, the R1LV0416DSB-5SI#B0 is designed for low power consumption, making it suitable for battery-operated devices that require efficient data storage and retrieval.

R1LV0416DSB-5SI#B0

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pkg. Type TSOP(2) Carrier Type Tray

FAQs

What is R1LV0416DSB-5SI#B0?

The R1LV0416DSB-5SI#B0 is a 4M (512K x 8)-bit low voltage, full CMOS Static RAM designed by Renesas Electronics. It is suitable for a wide range of applications including automotive electronics, industrial equipment, and consumer electronics.

How Does R1LV0416DSB-5SI#B0 Work?

The R1LV0416DSB-5SI#B0 operates as a static random-access memory (SRAM) with low voltage operation and full CMOS compatibility. It provides fast access times and low power consumption, making it suitable for use in battery-powered devices and other power-sensitive applications. The memory device offers non-volatility, retaining stored data without the need for constant power supply.

How Many Pins does R1LV0416DSB-5SI#B0 have and What are the Functions of the Pinout Configuration?

The R1LV0416DSB-5SI#B0 is housed in a 32-pin SOP (Small Outline Package) package. The pinout configuration includes:

  • VCC, VSS: Power supply and ground pins, respectively.
  • OE: Output Enable pin.
  • CE1, CE2: Chip Enable pins.
  • WE: Write Enable pin.
  • RY/BY: Ready/Busy output pin.
  • Address Pins (A0 - A18): Address inputs for memory location selection.
  • Data Pins (Q1 - Q8): Data input/output pins.

What are the Pros and Cons of R1LV0416DSB-5SI#B0?

Pros:

  • Low Voltage Operation: Operates at low voltage levels, suitable for power-sensitive applications.
  • Fast Access Times: Provides quick read and write access for efficient data retrieval.
  • Non-Volatile Storage: Retains stored data without the need for continuous power supply.
  • Wide Application Range: Suitable for various industries including automotive, industrial, and consumer electronics.

Cons:

  • Package Size: The 32-pin SOP package may not be suitable for space-constrained designs.
  • Availability: Limited availability or long lead times may be a concern for some customers.

Are There Any Equivalents/Alternatives to R1LV0416DSB-5SI#B0 for Recommendation?

  • The CY62148EV30LL-45ZSXI from Cypress Semiconductor is a similar 4Mbit low voltage SRAM with comparable features.
  • Alternatives to the R1LV0416DSB-5SI#B0 include the AS6C4008-55PCN from Alliance Memory and the IS61LV51216AL from ISSI (Integrated Silicon Solution, Inc.).

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