PSMN7R5-60YLX
PSMN7R5-60YL - N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-PinPSMN7R5-60YLX
PSMN7R5-60YL - N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin
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Manufacturer Part # : PSMN7R5-60YLX
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Package/Case: SOT669
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Part Status : Active
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Brand: NXP Semiconductors
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Product Categories : Single FETs, MOSFETs
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Series : PSMN7R5
Quality Assurance
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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PSMN7R5-60YLX DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
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1 | $0.606 | $0.61 |
10 | $0.592 | $5.92 |
30 | $0.583 | $17.49 |
100 | $0.574 | $57.40 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
PSMN7R5-60YLX Description
The PSMN7R5-60YLX is a high-performant N Channel SOT-669 MOSFET from Nexperia USA Inc., designed for efficient power management in various applications. This device features low RDSon and Qg, providing improved efficiency and fast switching speed. It operates between 2.1V@1mA, making it suitable for compact power modules.
Features
- Innovative design for low power consumption: Optimized to reduce energy waste and minimize heat generation.
- High-speed switching with fast rise and fall times: Enables efficient and reliable performance in demanding applications.
- Silicon-based device provides high reliability: Ensures consistent and stable operation across a wide temperature range.
- Ultra-low RDSon and Qg for improved efficiency
- Logic level gate operation simplifies control circuits
- High-reliability rating ensures consistent performance
- Avalanche rated with 100% tested
Applications
The PSMN7R5-60YLX is suitable for various applications where efficient power management and high-performant switching are required, such as industrial automation systems.
Where to Use:
- Automotive systems
- Industrial automation systems
- Power supplies and converters
- Aerospace electronics
Manufacturer
The PSMN7R5-60YLX is manufactured by Nexperia USA Inc. (formerly NXP Semiconductors), a global leader in semiconductor technology, specializing in analog and digital integrated circuits.
This product was developed to meet the growing demand for high-performant power management devices in various applications where efficiency, reliability, and low power consumption are essential.
Packages
The PSMN7R5-60YLX comes in a standard SOT-669 package, designed for surface-mount technology (SMT) integration into electronic circuits.
Equivalent Parts of
- STP16NF06: A comparable power MOSFET from STMicroelectronics with similar features and performance.
FAQ
Q: What is the maximum gate-source voltage rating of the PSMN7R5-60YLX?
A: It has a maximum gate-source voltage rating of 20V, ensuring reliable operation in various applications.
Q: Can the PSMN7R5-60YLX handle avalanche currents?
A: Yes, it is designed to withstand avalanche conditions, ensuring consistent and stable performance even during extreme current surges.
Q: How does the PSMN7R5-60YLX handle thermal stress?
A: It operates within a wide temperature range of -55°C to 150°C, allowing it to function reliably in various environmental conditions without degradation.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Active | Part Package Code | SOIC |
Pin Count ! | 4 | Reach Compliance Code | compliant |
Additional Feature ! | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 76.5 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 86 A |
Drain-source On Resistance-Max | 0.0087 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-235 | JESD-30 Code | R-PSSO-G4 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 346 A | Reference Standard | IEC-60134 |
Surface Mount ! | YES | Terminal Finish | TIN |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Manufacturer | Nexperia |
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-669-5 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 86 A | Rds On - Drain-Source Resistance | 6 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.4 V |
Qg - Gate Charge | 60.6 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 175 C | Pd - Power Dissipation | 147 W |
Channel Mode | Enhancement | Brand | Nexperia |
Fall Time | 26 ns | Product Type ! | MOSFET |
Rise Time ! | 30 ns | Factory Pack Quantity | 1500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 42 ns | Typical Turn-On Delay Time | 17 ns |
Part # Aliases | 934069896115 | Unit Weight | 0.003225 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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