PSMN7R5-60YLX

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PSMN7R5-60YL - N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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PSMN7R5-60YLX DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.606 $0.61
10 $0.592 $5.92
30 $0.583 $17.49
100 $0.574 $57.40

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Interested Parts

Rapid Quote

Please submit RFQ for PSMN7R5-60YLX or email to us: Email: [email protected], we will contact you in 12 hours.

PSMN7R5-60YLX Description

The PSMN7R5-60YLX is a high-performant N Channel SOT-669 MOSFET from Nexperia USA Inc., designed for efficient power management in various applications. This device features low RDSon and Qg, providing improved efficiency and fast switching speed. It operates between 2.1V@1mA, making it suitable for compact power modules.

Features

  • Innovative design for low power consumption: Optimized to reduce energy waste and minimize heat generation.
  • High-speed switching with fast rise and fall times: Enables efficient and reliable performance in demanding applications.
  • Silicon-based device provides high reliability: Ensures consistent and stable operation across a wide temperature range.
    • Ultra-low RDSon and Qg for improved efficiency
    • Logic level gate operation simplifies control circuits
    • High-reliability rating ensures consistent performance
    • Avalanche rated with 100% tested

Applications

The PSMN7R5-60YLX is suitable for various applications where efficient power management and high-performant switching are required, such as industrial automation systems.

Where to Use:

  • Automotive systems
  • Industrial automation systems
  • Power supplies and converters
  • Aerospace electronics

Manufacturer

The PSMN7R5-60YLX is manufactured by Nexperia USA Inc. (formerly NXP Semiconductors), a global leader in semiconductor technology, specializing in analog and digital integrated circuits.

This product was developed to meet the growing demand for high-performant power management devices in various applications where efficiency, reliability, and low power consumption are essential.

Packages

The PSMN7R5-60YLX comes in a standard SOT-669 package, designed for surface-mount technology (SMT) integration into electronic circuits.

Equivalent Parts of

  • STP16NF06: A comparable power MOSFET from STMicroelectronics with similar features and performance.

FAQ

Q: What is the maximum gate-source voltage rating of the PSMN7R5-60YLX?
A: It has a maximum gate-source voltage rating of 20V, ensuring reliable operation in various applications.

Q: Can the PSMN7R5-60YLX handle avalanche currents?
A: Yes, it is designed to withstand avalanche conditions, ensuring consistent and stable performance even during extreme current surges.

Q: How does the PSMN7R5-60YLX handle thermal stress?
A: It operates within a wide temperature range of -55°C to 150°C, allowing it to function reliably in various environmental conditions without degradation.

PSMN7R5-60YLX

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Active Part Package Code SOIC
Pin Count ! 4 Reach Compliance Code compliant
Additional Feature ! AVALANCHE RATED Avalanche Energy Rating (Eas) 76.5 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 86 A
Drain-source On Resistance-Max 0.0087 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235 JESD-30 Code R-PSSO-G4
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 4
Operating Mode ! ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 346 A Reference Standard IEC-60134
Surface Mount ! YES Terminal Finish TIN
Terminal Form ! GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer Nexperia
Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-669-5 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 86 A Rds On - Drain-Source Resistance 6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.4 V
Qg - Gate Charge 60.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 175 C Pd - Power Dissipation 147 W
Channel Mode Enhancement Brand Nexperia
Fall Time 26 ns Product Type ! MOSFET
Rise Time ! 30 ns Factory Pack Quantity 1500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 42 ns Typical Turn-On Delay Time 17 ns
Part # Aliases 934069896115 Unit Weight 0.003225 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification PSMN7R5-60YLX PDF Download

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