PHX9NQ20T

Rail Power MOSFET Solution
7,459 Effective Inventory

PHX9NQ20T

Effective Inventory7,459

Rail Power MOSFET Solution

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PHX9NQ20T DataSheet
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PHX9NQ20T Details

The PHX9NQ20T is a high-voltage MOSFET from Nexperia, designed for various power applications. This MOSFET offers a drain-source voltage rating of 200V and a continuous drain current of 9A, making it suitable for high-power switching and amplification circuits. It is housed in a compact and thermally efficient package, allowing for efficient heat dissipation and compact circuit designs.

Pinout

  • 1 (G): Gate
  • 2 (D): Drain
  • 3 (S): Source

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High Voltage Rating: Provides a maximum drain-source voltage of 200V for high-voltage applications.
  • High Current Capability: Capable of carrying a continuous drain current of 9A, suitable for power switching and amplification.
  • Low On-Resistance: Offers low on-resistance for efficient power dissipation and minimal voltage drops.
  • Compact Package: Housed in a compact package for space-saving circuit designs.
  • Thermally Efficient: Designed for efficient heat dissipation to ensure reliable operation.

Application

  • Power Switching: Ideal for power switching applications that require high voltage and current handling capabilities.
  • Amplification: Used in amplifier circuits for signal amplification and power delivery.
  • Inverters: Suitable for inverter circuits in power conversion systems.

Where to Use

The PHX9NQ20T is suitable for power applications that require high voltage and current capabilities. It can be used in power supply circuits, amplifiers, inverters, and other systems where efficient power switching and amplification is crucial.

How to Use

Connect the PHX9NQ20T to your circuit by wiring the gate, drain, and source pins as per the application requirements. Ensure proper power supply connections and take into account the heat dissipation requirements. Refer to the datasheet for detailed usage instructions and recommended operating conditions.

Equivalents

  • IRF610: A similar MOSFET with comparable characteristics and performance.
  • IXFX90N20T: An alternative MOSFET offering similar voltage and current ratings.

Complementary

The PHX9NQ20T can be complemented by the PHX9NQ10T, which offers a lower voltage rating and current handling capability. This can be useful for applications that require lower power levels and reduced voltage ratings.

When selecting complementary MOSFETs, ensure their voltage and current ratings align with your specific application requirements for optimal performance.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the PHX9NQ20T?

A: The PHX9NQ20T has a maximum drain-source voltage rating of 200V. It is important to operate within the specified limits for reliable performance and durability.

Q: Can the PHX9NQ20T be used for power switching applications?

A: Yes, the PHX9NQ20T is specifically designed for power switching applications, offering high voltage and current capabilities. It is suitable for various power control and conversion systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 5.2 A Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 25 W
Channel Mode Enhancement Brand NXP Semiconductors
Configuration Single Fall Time 15 ns
Height 9.3 mm Length 10.3 mm
Product Type ! MOSFET Rise Time ! 19 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 8 ns Width 4.6 mm
Part # Aliases PHX9NQ20T,127 Unit Weight 0.068784 oz

FAQs

What is PHX9NQ20T?

The PHX9NQ20T is a 200V, 9A N-channel Power MOSFET designed by NXP Semiconductors. It is ideal for high-power applications such as motor control, power supplies, and power management in various electronic systems.

How Does PHX9NQ20T Work?

The PHX9NQ20T works by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. It is used to switch and amplify electronic signals in power electronics applications, offering low on-resistance and high current-handling capabilities.

How Many Pins does PHX9NQ20T have and What are the Functions of the Pinout Configuration?

The PHX9NQ20T is housed in a TO-220-3 package. The pinout configuration includes:

  • GATE: Gate control pin.
  • DRAIN: Current flow output pin.
  • SOURCE: Current flow input pin.

What are the Pros and Cons of PHX9NQ20T?

Pros:

  • High Voltage and Current Capability: Suitable for high-power applications.
  • Low On-Resistance: Efficient power handling with minimal voltage drop.
  • Robust Packaging: TO-220-3 package offers good thermal and electrical performance.
  • Wide Application Range: Can be used in various power management and control systems.

Cons:

  • Size and Weight: The TO-220-3 package may be relatively large for some space-constrained designs.
  • Drive Circuitry: Requires proper gate drive circuitry for optimal performance.
  • Heat Dissipation: High power dissipation may require additional heat sink or thermal management.

Are There Any Equivalents/Alternatives to PHX9NQ20T for Recommendation?

Alternatives to the PHX9NQ20T include the IRFB7434PbF from Infineon and the STP9NC60 from STMicroelectronics.

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