PDTC114EE

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Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

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PDTC114EE DataSheet

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PDT114EE Description

The PDTC114EE is a small signal bipolar transistor from Nexperia, designed for digital applications. This device is ideal for use in compact circuit designs where high current gain and low noise are required.

Pin Details

The PDTC114EE is a 1-element NPN transistor with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (B): Base
  • Pin 2 (C): Collector
  • Pin 3 (E): Emitter
  • Pin 4 (GND): Ground
  • Pin 5 (VCC): Positive Power Supply
  • Pin 6 (VBE): Base-Emitter Voltage
  • Pin 7 (VCB): Collector-Base Voltage
  • Pin 8 (VCE): Collector-Emitter Voltage

Features

  • High Current Gain: Offers high current gain for efficient power amplification.
  • Low Noise: Minimizes noise and distortion in digital applications.
  • Compact Design: Suitable for use in compact circuit designs where space is limited.

Applications

The PDTC114EE is commonly used in digital applications such as amplifiers, switches, and logic circuits.

Where to Use:

  • Digital amplifiers
  • Digital switches
  • Logic circuits

Manufacturer

The PDTC114EE is manufactured by Nexperia, a global leader in semiconductor technology.

Packages

The PDTC114EE comes in an 8-pin SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.

Equivalent Parts of PDTC114EE

  • BF494: A comparable NPN transistor from ON Semiconductor with similar features and performance.
  • 2N3904: An alternative NPN transistor from Fairchild Semiconductor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Transferred
ECCN Code EAR99 Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 30 JESD-609 Code e3
Number of Elements 1 Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.15 W
Surface Mount ! YES Terminal Finish MATTE TIN
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification PDTC114EE PDF Download

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