NVHL160N120SC1

Effective Inventory9,435

MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L

  • Manufacturer Part # : NVHL160N120SC1

  • Package/Case: TO-247-3LD

  • Part Status : Active

  • Brand: Onsemi

  • Product Categories : Single FETs, MOSFETs

  • RoHS:

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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NVHL160N120SC1 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Interested Parts

Rapid Quote

Please submit RFQ for NVHL160N120SC1 or email to us: Email: [email protected], we will contact you in 12 hours.

NVHL160N120SC1 Details

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Key Features

  • 1200V rated
  • High Speed Switching and Low Capacitance
  • Qualified for Automotive According to AEC−Q101

Application

  • DC-DC Power
  • On Board Charging

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category ! MOSFET
RoHS Details Technology SiC
Mounting Style Through Hole Package / Case TO-247-3LD
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 17 A
Rds On - Drain-Source Resistance 224 mOhms Vgs - Gate-Source Voltage - 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4.3 V Qg - Gate Charge 34 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 175 C
Pd - Power Dissipation 119 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 8 ns Forward Transconductance - Min 3 S
Product Type ! MOSFET Rise Time ! 19 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 11 ns Unit Weight 0.211644 oz

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