NVHL027N65S3F
NVHL027N65S3F - Single N-Channel Power MOSFET SUPERFET IIINVHL027N65S3F
NVHL027N65S3F - Single N-Channel Power MOSFET SUPERFET III
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Manufacturer Part # : NVHL027N65S3F
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Package/Case: TO-247-3LD
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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NVHL027N65S3F DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
NVHL027N65S3F Description
The NVHL027N65S3F is an N-channel power MOSFET from Onsemi, designed for high-frequency applications. This device is ideal for industrial communication systems, featuring improved high-frequency performance, better noise immunity, and a wide operating frequency range. It is housed in a TO-247 package, making it suitable for compact circuit designs.
Pin Details
The NVHL027N65S3F is a 650V N-channel power MOSFET with three pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- CURRENT: 75A
- VOLTAGE: 650V
- PINS: 3-Pin TO-247 T/R
Features
- Improved High-Frequency Performance: Offers enhanced performance for high-frequency applications.
- Better Noise Immunity: Provides stable communication in noisy environments with minimal noise interference.
- Larger Operating Frequency Range: Operates efficiently across a wide frequency range, making it suitable for various applications.
- Reduced Electromagnetic Interference: Minimizes the impact of electromagnetic interference (EMI) for reliable communication.
- Increased Power Density: Offers higher power handling capacity in a compact package, making it suitable for high-power applications.
- Easier Debugging and Testing: Simplifies debugging and testing processes with its easy-to-use circuit design features.
Application
The NVHL027N65S3F is commonly used in HV DC/DC converter and on-board charger applications, especially those requiring high-frequency performance, noise immunity, and a wide operating frequency range.
Where to Use:
- HV DC/DC converters
- On-board chargers
Manufacturer
The NVHL027N65S3F was developed by Onsemi, a leading semiconductor technology company. It falls under the category of power MOSFETs, which are designed to handle high-frequency and high-power applications.
This product was developed to meet the growing demand for reliable high-frequency communication in industrial and automotive systems, where features like improved high-frequency performance, better noise immunity, and a wide operating frequency range are essential.
Packages
The NVHL027N65S3F comes in a TO-247 package. This package is designed for through-hole technology, offering a compact and efficient solution for integrating the power MOSFET into electronic circuits.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 4 Weeks | Date Of Intro | 2019-01-14 |
Avalanche Energy Rating (Eas) | 1610 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 650 V | Drain Current-Max (Abs) (ID) | 75 A |
Drain Current-Max (ID) | 75 A | Drain-source On Resistance-Max | 0.0274 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 595 W | Pulsed Drain Current-Max (IDM) | 187.5 A |
Reference Standard | AEC-Q101 | Surface Mount ! | NO |
Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form ! | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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