NVH4L045N065SC1

Silicon Carbide MOSFET, N-Channel, 33 mohm, 650V
7,250 Effective Inventory

NVH4L045N065SC1

Effective Inventory7,250

Silicon Carbide MOSFET, N-Channel, 33 mohm, 650V

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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NVH4L045N065SC1 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $16.780 $16.78
10 $16.065 $160.65
30 $14.828 $444.84
100 $13.748 $1,374.80

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Interested Parts

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Please submit RFQ for NVH4L045N065SC1 or email to us: Email: [email protected], we will contact you in 12 hours.

NVH4L045N065SC1 Description

The NVH4L045N065SC1 is a high-performance, 650V, 50mΩ, 55A N-Channel Silicon Carbide MOSFET from onsemi, designed for demanding power management applications. This device features low RDS(on), low gate charge, and low reverse recovery charge, making it ideal for use in automotive DC/DC and PFC converters.

Pin Details

The NVH4L045N065SC1 is a high-power MOSFET with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (VCC): Positive Power Supply
  • Pin 2 (GND): Ground
  • Pin 3 (A): Non-inverting Receiver Input/Driver Output
  • Pin 4 (B): Inverting Receiver Input/Driver Output
  • Pin 5 (RO): Receiver Output
  • Pin 6 (RE): Receiver Output Enable
  • Pin 7 (DE): Driver Output Enable
  • Pin 8 (DI): Driver Input

Features

  • High Power Density: Offers high power density for efficient energy management.
  • Low RDS(on): Provides low on-resistance for reduced power losses.
  • Low Gate Charge: Minimizes gate charge to reduce switching losses.
  • Low Reverse Recovery Charge: Reduces reverse recovery charge to minimize electromagnetic interference (EMI).
  • High Temperature Range: Operates within a wide temperature range of -40°C to +150°C for reliable performance in various environments.

Applications

The NVH4L045N065SC1 is suitable for use in automotive DC/DC and PFC converters, as well as other demanding power management applications where high-performance MOSFETs are required.

Where to Use:

This device can be used in various industries, including automotive, industrial, and consumer electronics, where reliable and efficient power management is crucial.

Manufacturer

The NVH4L045N065SC1 is manufactured by onsemi, a leading provider of innovative semiconductor solutions for the global market.

Packages

The NVH4L045N065SC1 comes in an 8-pin SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the MOSFET into electronic circuits.

Equivalent Parts of NVH4L045N065SC1

  • NVH4L045N060SC1: A comparable high-performance MOSFET from onsemi with similar features and performance.
  • STP16NF06L: An alternative high-power MOSFET from STMicroelectronics that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Date Of Intro 2020-03-27 Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain Current-Max (Abs) (ID) 65.5 A
Drain Current-Max (ID) 65.5 A FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 13.76 pF JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4 JESD-609 Code e3
Number of Elements 1 Number of Terminals 4
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 338 W
Pulsed Drain Current-Max (IDM) 312 A Surface Mount ! NO
Terminal Finish Matte Tin (Sn) - annealed Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Transistor Element Material SILICON CARBIDE

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NVH4L045N065SC1 PDF Download

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